Oral presentation

[21a-C306-1~10] 7.2 Applications and technologies of electron beams

Wed. Sep 21, 2022 9:00 AM - 11:45 AM C306 (C306)

Katsuhisa Murakami(AIST), Takafumi Ishida(Nagoya University)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [21a-C306-1] Direct observation of atomic structures in beam-sensitive materials using ultra-efficient scanning transmission electron microscopy

〇Kousuke Ooe^1,2, Takehito Seki^2,3, Kaname Yoshida¹, Yuji Kohno⁴, Yuichi Ikuhara^1,2, Naoya Shibata^1,2 (1.JFCC, 2.The Univ. of Tokyo, 3.JST PRESTO, 4.JEOL Ltd.)

9:15 AM - 9:30 AM

[21a-C306-2] Imaging Periodically Changing Electric Field with Stroboscopic Electron Holography

〇Yoh Iwasaki¹, Zentaro Akase², Keiko Shimada¹, Ken Harada¹, Daisuke Shindo¹ (1.RIKEN, 2.Tohoku Univ.)

9:30 AM - 9:45 AM

[21a-C306-3] Transient response Imaging of device potential using ultra-fast time resolution SEM

〇Kohei Kawasaki¹, Yuga Emoto¹, Yuki Yamamoto¹, Samuel Jeong¹, Yusuke Arashida¹, Shoji Yoshida¹, Keishi Akada¹, Jun-ichi Fujita¹ (1.Univ. of Tsukuba)

9:45 AM - 10:00 AM

[21a-C306-4] Imaging of the material distrubution in the electrode of sulfer-based all-solid-state Li-ion batteries via low-voltage SEM

〇Mitsunori Kitta¹, Noboru Taguchi¹, Kentaro Kuratani¹, Hikari Sakaebe¹ (1.AIST)

10:00 AM - 10:15 AM

[21a-C306-5] Deposition of hafnium oxide by electron beam induced deposition method

〇Shunsuke Kobayashi¹ (1.JFCC)

10:30 AM - 10:45 AM

[21a-C306-6] Development of a boundary magnetic charge method for computing magnetic fields in a system containing saturated magnetic materials

〇Genya Sugiura¹, Hidekazu Murata¹, Takayuki Tanaka¹, Eiji Rokuta¹ (1.Meijo Univ.)

10:45 AM - 11:00 AM

[21a-C306-7] Work function evaluation of LaB₆ thermionic emission at low-temperature operation

〇Chotaro Kajita¹, Futo Okada¹, Takayuki Tanaka¹, Hidekazu Murata¹, Eiji Rokuta¹ (1.Meijo Univ.)

11:00 AM - 11:15 AM

[21a-C306-8] Reexamination of electron emission under extremely low extraction biases

〇(M1)Yukino Inaba¹, Sakura Kabeya¹, Sakiho Morioka¹, Ayaka Waki¹, Mako Yoshida¹, Yuuka Kunieda¹, Eiji Rokuta¹, Hidekazu Murata¹ (1.Meijo Univ.)

11:15 AM - 11:30 AM

[21a-C306-9] On the Origin of Molecular Patterns in FEM

〇(B)Yuho Yamamoto¹, Ryohei Turuta¹, Masahiro Sasaki¹, Yoichi Yamada¹ (1.Tsukuba Univ)

11:30 AM - 11:45 AM

[21a-C306-10] Electronic structure of CeB₆

〇Ryohei Tsuruta¹, Masahiro Sasaki¹, Yoichi Yamada¹ (1.Univ. Tsukuba)

Oral presentation

[21p-C306-1~5] 7.2 Applications and technologies of electron beams

Wed. Sep 21, 2022 1:30 PM - 2:45 PM C306 (C306)

Masahiro Sasaki(Univ. Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[21p-C306-1] Dependence of work function of hafnium nitride thin films by reactive sputtering on nitrogen composition

〇Tomoaki Osumi^1,2, Masayoshi Nagao², Yasuhito Gotoh¹ (1.Kyoto Univ., 2.AIST)

1:45 PM - 2:00 PM

[21p-C306-2] Development of FEL using deep ultraviolet phosphors

〇(M2)Gai Hashimoto^1,2, Yoichiro Neo^1,2, Takahiro Matsumoto³ (1.Grad.Sch.of Eng.Shizuoka Univ., 2.RIE Shizuoka Univ., 3.Nagoya City Univ.)

2:00 PM - 2:15 PM

△ [21p-C306-3] Development of direct synthesis of h-BN on Si substrate and graphene/h-BN/Si planar type electron sources

〇masaya yamamoto^1,2 (1.Shizuoka Univ., 2.AIST)

2:15 PM - 2:30 PM

[21p-C306-4] Electron Emission from Planar-type Electron Source based on Nanocrystalline Silicon under Rough Vacuum

〇Hidetaka Shimawaki¹, Masayoshi Nagao², Katsuhisa Murakami² (1.Hachinohe Inst.Tech., 2.AIST)

2:30 PM - 2:45 PM

[21p-C306-5] Hydrogen generation from graphene planar type electron sources operated in ethanol

〇Katsuhisa Murakami¹, Hiromasa Murata¹, Masayoshi Nagao¹ (1.AIST)

Sessions

7 Beam Technology and Nanofabrication » 7.2 Applications and technologies of electron beams