The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[22p-A406-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 22, 2022 1:00 PM - 5:00 PM A406 (A406)

Toru Harigai(Toyohashi Univ. of Tech.), Takayoshi Tsutsumi(名大)

4:15 PM - 4:30 PM

[22p-A406-13] Deposition of rutile titanium oxide thin film using high power pulsed magnetron sputtering

〇(M1C)Miyuki Nishimura1, Takayuki Ohta1 (1.Meijo Univ.)

Keywords:high power pulsed magnetron sputtering, rutile titanium oxide, crystal structure

The rutile TiO2 films were deposited using HPPMS in Ar and O2 gases without substrate heating. From XRD measurement, it is confirmed that the transformation from anatase phase to rutile phase occurred with increasing the target voltage. The ionization of the species was proceeded in the plasma evaluated by optical emission spectroscopy. Ion bombardment
a. Therefore, it is indicated that increase of ions is effective for coating rutile TiO2