Oral presentation

[16a-A304-1~8] 13.9 Compound solar cells

Thu. Mar 16, 2023 9:30 AM - 11:30 AM A304 (Building No. 6)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[16a-A304-1] Excitation Power Dependence of the Photoluminescence Spectra of InGaAs/GaAsP Wire on Well structures

〇Tetsuo Ikari¹, Yamamoto Naoki¹, Komaba Shintaro¹, Sugiyama Masakazu², Fukuyama Atsuhiko¹ (1.Univ Miyazaki, 2.Univ Tokyo)

9:45 AM - 10:00 AM

△ [16a-A304-2] Multi-stacking of GaSb/GaAs quantum rings in intermediate band solar cells using Fabry-Perot structure

〇Yusuke Oteki^1,2, Yoshitaka Okada^1,2 (1.Univ. of Tokyo, 2.RCAST)

10:00 AM - 10:15 AM

▼ [16a-A304-3] Assessing Silicon Nanowires as a Bottom Cell Material for III-V Multijunction Solar Cells using Thin InGaP/GaAs Filter

〇(P)Bernice Espaldon¹, Wipakorn Jevasuwan², Naoki Fukata², Yoshitaka Okada¹ (1.Univ. of Tokyo, 2.NIMS)

10:15 AM - 10:30 AM

▲ [16a-A304-4] Polarity dependence of the properties of GaAs solar cells

〇Hassanet Sodabanlu¹, Gan Li², Kentaroh Watanabe¹, Yoshiaki Nakano², Masakazu Sugiyama^1,2 (1.RCAST, U.Tokyo, 2.School of Eng, U.Tokyo)

10:30 AM - 10:45 AM

[16a-A304-5] Fabrication of ultra-thin GaAs solar cells with light scattering textured rear structure using blockcopolymers

〇Ryoya Tsuchida¹, Kentaroh Watanabe², Yoshiaki Nakano¹, Masakazu Sugiyama^1,2 (1.The Univ. of Tokyo, 2.RCAST)

10:45 AM - 11:00 AM

▲ [16a-A304-6] Low-temperature photoluminescence investigation of p-type C-doped AlGaAs grown by MOVPE on vicinal substrates

〇Gan Li¹, Hassanet Sodabanlu², Maui Hino¹, Meita Asami¹, Kentaroh Watanabe², Masakazu Sugiyama^1,2, Yoshiaki Nakano¹ (1.The Univ. of Tokyo, 2.RCAST, the Univ. of Tokyo)

11:00 AM - 11:15 AM

▼ [16a-A304-7] Optimization of base layer thickness in rear hetero-junction InGaAs cell for four-junction applications

〇Depu Ma¹, Gan Li¹, Meita Asami¹, Kentaroh Watanabe², Hassanet Sodabanlu², Masakazu Sugiyama^1,2, Yoshiaki Nakano¹ (1.The Univ. of Tokyo, 2.RCAST, the Univ. of Tokyo)

11:15 AM - 11:30 AM

[16a-A304-8] Development of InGaP/GaAs/In_xGa_1-xAs//In_yGa_1-yAs four-junction solar cells by wafer bonding

〇Takashi Shimasaki¹, Kentaroh Watanabe², Hassanet Sodabanlu², Yoshiaki Nakano¹, Masakazu Sugiyama^1,2 (1.Tokyo Univ., 2.RCAST)

Oral presentation

[16p-A304-1~13] 13.9 Compound solar cells

Thu. Mar 16, 2023 1:00 PM - 4:30 PM A304 (Building No. 6)

Hitoshi Tampo(AIST), Yoshitaro Nose(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[16p-A304-1] High efficiency CIGS solar cells with cell separation by wet chemical etching

〇Jiro Nishinaga¹, Yukiko Kamikawa¹, Hajime Shibata¹, Shogo Ishizuka¹ (1.AIST)

1:15 PM - 1:30 PM

△ [16p-A304-2] Optimal Design of CIGS Solar Cells Using Kernel Method

〇Ryuki Kasai¹, Akihiro Funaki¹, Ryotaro Fukuda¹, Takahito Nishimura¹, Akira Yamada¹ (1.Tokyo Tech.)

1:30 PM - 1:45 PM

[16p-A304-3] The fabrication of photovoltaic-photoelectrochemical-Integrated Cu(In,Ga)Se₂ planar device for water splitting

〇Kana Ueda¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

1:45 PM - 2:00 PM

[16p-A304-4] Investigation of CO₂ reduction using Cu(In,Ga)Se₂ photoelectrode by controlling the conduction band minimum bending

〇Kazuma Okada¹, Kana Ueda¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

2:00 PM - 2:15 PM

[16p-A304-5] Fabrication SnS thin film using sputtering method with PGS cathode

〇Taichi Nogami¹, Issei Suzuki¹, Takahisa Omata¹ (1.Tohoku Univ.)

2:15 PM - 2:30 PM

[16p-A304-6] Electrostatic spray deposition of SnS thin films for light absorbing layer of solar cells

〇Takuma Shoji¹, Keisuke Tomono¹, Keito Okubo¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

2:30 PM - 2:45 PM

[16p-A304-7] Characterization of Cu₂ZnSnS₄ bulk crystals grown by SPS method Ⅵ

〇Hazuki Yoshii¹, Masatoshi Ogura¹, Arata Kuribayashi¹, Koichiro Oishi¹, Naritoshi Aoyagi¹, Yosuke Shimamune¹, Akiko Takeuchi¹ (1.NIT Nagaoka)

3:00 PM - 3:15 PM

[16p-A304-8] Investigation of n-type semiconductor/ZnSnP₂ interfaces by photoreflectance

〇Isshin Sumiyoshi¹, Yoshitaro Nose¹ (1.Kyoto Univ.)

3:15 PM - 3:30 PM

[16p-A304-9] Deposition of n-CdSnP₂ by MBE

〇(M1)Hayato Miura¹, Isshin Sumiyoshi¹, Yoshitaro Nose¹ (1.Kyoto Univ.)

3:30 PM - 3:45 PM

▲ [16p-A304-10] Oxygen Partial Pressure Dependence Effect to Mo-doped BiVO₄ Thin-Film Photoanode Performance Sputtered by Single Target Radio Frequency

〇(D)Lingga Ghufira Oktariza¹, Namiki Uezono¹, Yuta Sato¹, Shukur Gofurov¹, Muhammad Monirul Islam¹, Shigeru Ikeda², Takeaki Sakurai¹ (1.University of Tsukuba, 2.Konan University)

3:45 PM - 4:00 PM

[16p-A304-11] Investigation on the proton irradiation on an oxide solar cell

〇Yoshiyuki Kawaharada¹, Fumihisa Kano¹, Toshiyuki Fujita¹, Miyuki Shiokawa¹, Haruki Ohnishi¹, Katsuya Yamashita¹, Yuya Honishi², Soichiro Shibasaki², Kazushige Yamamoto² (1.Toshiba Energy Systems & Solutions, 2.Toshiba)

4:00 PM - 4:15 PM

[16p-A304-12] Reduction in resistivity of Cu₃N and Cu₂O thin films by O₂-annealing

〇(M1)Masaya Ise¹, Yuusuke Kanai¹, Hiroyasu Ishikawa^1,2 (1.Shibaura Inst of Tech., 2.Int. Res. Center for Green Electronics)

4:15 PM - 4:30 PM

[16p-A304-13] Preparation of Cu₃N thin film by RF magnetron sputtering
and observation of p-type conduction by N₂ annealing

〇Haruki Nakamura¹, Ishikawa Hiroyasu^1,2, Fujinaka Masato¹, Katagiri Sho¹ (1.Shibaura Inst., 2.Int. Res. Center for Green Electronics)

Poster presentation

[17p-PB03-1~7] 13.9 Compound solar cells

Fri. Mar 17, 2023 1:30 PM - 3:30 PM PB03 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[17p-PB03-1] The sputtering gas pressure dependence for the bending resistance of Mo conducting film deposited on flexible substrates

〇Yuu Takeuchi¹, Takuto Maeda¹, Takuya Takahashi¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

1:30 PM - 3:30 PM

[17p-PB03-2] Influence of Ge/(Ge+Sn) ratio on electrical properties of Cu₂(Sn,Ge)S₃ solar cells

〇(M1)Ray Ohashi¹, Ayaka Kanai¹, Hideaki Araki², Kunihiko Tanaka¹ (1.Nagaoka Univ. Tech., 2.NIT, Nagaoka College)

1:30 PM - 3:30 PM

[17p-PB03-3] Fabrication of Cu₂Sn_1-xGe_xS₃ Thin-Film Solar Cells Using a Co-Evaporation

〇Takeshi Tasaki¹, Hideaki Araki¹ (1.NIT, Nagaoka College)

1:30 PM - 3:30 PM

[17p-PB03-4] Fabrication of (Ge, Sn) S thin film solar cells using co-evaporation method

〇Daiki Daiki Motai¹, Hideaki Araki¹ (1.NIT, Nagaoka, College)

1:30 PM - 3:30 PM

[17p-PB03-5] MBE Growth of ZnTeO thin films for photoelectrode application

〇Takaki Sonoyama¹, Katsuhiko Saito¹, Qixin Guo¹, Shigeru Ikeda², Tooru Tanaka¹ (1.Saga Univ., 2.Konan Univ.)

1:30 PM - 3:30 PM

[17p-PB03-6] Temperature dependence of photovoltaic properties in Cl-doped ZnCdTeO IBSCs

〇Daiki Daiki Tani¹, Katsuhiko Saito¹, Qixin Guo¹, Tooru Tanaka¹ (1.Saga Univ.)

1:30 PM - 3:30 PM

[17p-PB03-7] Improving structure of ZnO/CuBr_1-xI_x transparent microstructure solar cells

〇Naoya Tsujimoto¹, Daikichi Tamai¹, Chikashi Fujishima¹, Ayaka Kanai¹, Kunihiko Tanaka¹ (1.Nagaoka Univ. Tech.)

Sessions

13 Semiconductors » 13.9 Compound solar cells

[16a-A304-1~8] 13.9 Compound solar cells

[16a-A304-1] Excitation Power Dependence of the Photoluminescence Spectra of InGaAs/GaAsP Wire on Well structures

△ [16a-A304-2] Multi-stacking of GaSb/GaAs quantum rings in intermediate band solar cells using Fabry-Perot structure

▼ [16a-A304-3] Assessing Silicon Nanowires as a Bottom Cell Material for III-V Multijunction Solar Cells using Thin InGaP/GaAs Filter

▲ [16a-A304-4] Polarity dependence of the properties of GaAs solar cells

[16a-A304-5] Fabrication of ultra-thin GaAs solar cells with light scattering textured rear structure using blockcopolymers

▲ [16a-A304-6] Low-temperature photoluminescence investigation of p-type C-doped AlGaAs grown by MOVPE on vicinal substrates

▼ [16a-A304-7] Optimization of base layer thickness in rear hetero-junction InGaAs cell for four-junction applications

[16a-A304-8] Development of InGaP/GaAs/In_xGa_1-xAs//In_yGa_1-yAs four-junction solar cells by wafer bonding

[16p-A304-1~13] 13.9 Compound solar cells

[16p-A304-1] High efficiency CIGS solar cells with cell separation by wet chemical etching

△ [16p-A304-2] Optimal Design of CIGS Solar Cells Using Kernel Method

[16p-A304-3] The fabrication of photovoltaic-photoelectrochemical-Integrated Cu(In,Ga)Se₂ planar device for water splitting

[16p-A304-4] Investigation of CO₂ reduction using Cu(In,Ga)Se₂ photoelectrode by controlling the conduction band minimum bending

[16p-A304-5] Fabrication SnS thin film using sputtering method with PGS cathode

[16p-A304-6] Electrostatic spray deposition of SnS thin films for light absorbing layer of solar cells

[16p-A304-7] Characterization of Cu₂ZnSnS₄ bulk crystals grown by SPS method Ⅵ

[16p-A304-8] Investigation of n-type semiconductor/ZnSnP₂ interfaces by photoreflectance

[16p-A304-9] Deposition of n-CdSnP₂ by MBE

▲ [16p-A304-10] Oxygen Partial Pressure Dependence Effect to Mo-doped BiVO₄ Thin-Film Photoanode Performance Sputtered by Single Target Radio Frequency

[16p-A304-11] Investigation on the proton irradiation on an oxide solar cell

[16p-A304-12] Reduction in resistivity of Cu₃N and Cu₂O thin films by O₂-annealing

[16p-A304-13] Preparation of Cu₃N thin film by RF magnetron sputtering
and observation of p-type conduction by N₂ annealing

[17p-PB03-1~7] 13.9 Compound solar cells

[17p-PB03-1] The sputtering gas pressure dependence for the bending resistance of Mo conducting film deposited on flexible substrates

[17p-PB03-2] Influence of Ge/(Ge+Sn) ratio on electrical properties of Cu₂(Sn,Ge)S₃ solar cells

[17p-PB03-3] Fabrication of Cu₂Sn_1-xGe_xS₃ Thin-Film Solar Cells Using a Co-Evaporation

[17p-PB03-4] Fabrication of (Ge, Sn) S thin film solar cells using co-evaporation method

[17p-PB03-5] MBE Growth of ZnTeO thin films for photoelectrode application

[17p-PB03-6] Temperature dependence of photovoltaic properties in Cl-doped ZnCdTeO IBSCs

[17p-PB03-7] Improving structure of ZnO/CuBr_1-xI_x transparent microstructure solar cells

Authenticate

Sessions

13 Semiconductors » 13.9 Compound solar cells

[16a-A304-1~8] 13.9 Compound solar cells

△ [16a-A304-2] Multi-stacking of GaSb/GaAs quantum rings in intermediate band solar cells using Fabry-Perot structure

▼ [16a-A304-3] Assessing Silicon Nanowires as a Bottom Cell Material for III-V Multijunction Solar Cells using Thin InGaP/GaAs Filter

▲ [16a-A304-4] Polarity dependence of the properties of GaAs solar cells

▲ [16a-A304-6] Low-temperature photoluminescence investigation of p-type C-doped AlGaAs grown by MOVPE on vicinal substrates

▼ [16a-A304-7] Optimization of base layer thickness in rear hetero-junction InGaAs cell for four-junction applications

[16p-A304-1~13] 13.9 Compound solar cells

△ [16p-A304-2] Optimal Design of CIGS Solar Cells Using Kernel Method

▲ [16p-A304-10] Oxygen Partial Pressure Dependence Effect to Mo-doped BiVO4 Thin-Film Photoanode Performance Sputtered by Single Target Radio Frequency

[17p-PB03-1~7] 13.9 Compound solar cells

Authenticate

▲ [16p-A304-10] Oxygen Partial Pressure Dependence Effect to Mo-doped BiVO₄ Thin-Film Photoanode Performance Sputtered by Single Target Radio Frequency