Poster presentation

[15p-PA06-1~4] 15.5 Group IV crystals and alloys

Wed. Mar 15, 2023 4:00 PM - 6:00 PM PA06 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[15p-PA06-1] Strain Distributions of Carbon-doped Silicon Nanowires along [100] or [110] using X-ray Reciprocal Space Mapping

〇Ichiro Hirosawa^1,2, Kazutoshi Yoshioka^2,3, Takeshi Watanabe⁴, Ryo Yokokawa^2,3, Atsushi Ogura^2,3 (1.SAGA-LS, 2.Meiji Univ. MREL, 3.Meiji Univ., 4.JASRI)

4:00 PM - 6:00 PM

▲ [15p-PA06-2] Formation of SiO₂ Layer on SiGe/Si Nano-structures using Plasma-enhanced Atomic Layer Deposition

〇JIALUN CAI¹, NORIYUKI TAOKA¹, KATSUNORI MAKIHARA¹, AKIO OHTA¹, SEIICHI MIYAZAKI¹ (1.Nagoya Univ.)

4:00 PM - 6:00 PM

[15p-PA06-3] Suppression of crack generation in strained SiGe/Ge multiple quantum wells formed on Ge-on-Si(111)

〇Rena Kanesawa¹, Youya Wagatsuma¹, Syuya Kikuoka¹, Yuwa Sugiura¹, Michihiro Yamada^3,4, Kohei Hamaya^2,4,5, Kentarou Sawano¹ (1.Tokyo City Univ., 2.GSES, Osaka Univ., 3.JST-PRESTO, 4.CSRN, Osaka Univ., 5.OTRI, Osaka Univ.)

4:00 PM - 6:00 PM

[15p-PA06-4] Formation of SiGe/Ge heterostructures on Gd₂O₃-on-Si(111)

〇Shogo Sugimoto¹, Youya Wagatsuma¹, Takahiro Inoue¹, Xuejun Xu², Kentarou Sawano¹ (1.Tokyo City Univ. Advanced Research Laboratories, 2.NTT BRL)

Oral presentation

[16a-D511-1~10] 15.5 Group IV crystals and alloys

Thu. Mar 16, 2023 9:00 AM - 11:30 AM D511 (Building No. 11)

Kentarou Sawano(Tokyo City Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-D511-1] Solid-Phase Crystallization of Sn-Doped Si Thin-Films on Insulator

〇Yuki Hanafusa¹, Kota Okamoto¹, Taizoh Sadoh¹ (1.Kyushu Univ.)

9:15 AM - 9:30 AM

△ [16a-D511-2] Laser-induced Liquid-phase Crystallization and Optical Characterization of GeSn Wires on Si substrate

〇Yuki Kondo¹, Naoto Tabuchi¹, Mizuki Kuniyoshi², Takuma Kobayashi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.ULVAC, Inc.)

9:30 AM - 9:45 AM

▲ [16a-D511-3] Optical properties of highly strained n-Ge films grown by CW laser annealing

〇Rahmat Hadi Saputro^1,2, Ryo Matsumura¹, Tatsuro Maeda³, Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba, 3.AIST)

9:45 AM - 10:00 AM

[16a-D511-4] Exploration of under layers for improving solid phase crystallized Ge thin films

〇Kota Igura¹, Shintaro Maeda¹, Takamitsu Ishiyama¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

10:00 AM - 10:15 AM

△ [16a-D511-5] Selective nucleation in GeSn layers for high-speed thin-film transistors

〇Shintaro Maeda¹, Takamitsu Ishiyama¹, Kenta Moto², Keisuke Yamamoto², Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.Kyushu Univ.)

10:15 AM - 10:30 AM

[16a-D511-6] Solid phase crystallization of tensile-strained Ge_1−xSn_x films on Si(001) substrates

〇Tatsuma Hiraide¹, Tatsuki Oiwa¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

10:30 AM - 10:45 AM

[16a-D511-7] Solid phase crystallization of amorphous Ge / Mg / SiO₂ stacked structure

〇(B)Atsuki Morimoto¹, Towa Hirai¹, Ayato Takazaiku¹, Ryusei Komine¹, Kenichiro Takakura¹, Isao Tunoda¹ (1.NIT(KOSEN),Kumamoto College)

10:45 AM - 11:00 AM

[16a-D511-8] Surface Segregation of Si and Ge on Al/Si_0.2Ge_0.8(111) Structure by Annealing

〇(M1)Taiki Sakai¹, Keigo Matsushita¹, Akio Ohta¹, Noriyuki Taoka¹, Katsunori Makihara¹, Yuji Yamamoto², Seiichi Miyazaki¹ (1.Grad.Sch.of Eng.,Nagoya Univ., 2.IHP)

11:00 AM - 11:15 AM

▲ [16a-D511-9] Temperature dependence of GeS crystallization by vapor transport method

〇(P)Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata¹ (1.NIMS)

11:15 AM - 11:30 AM

[16a-D511-10] Formation of Ultra-thin Nickel Silicide on SiO₂using Si/Ni/Si Structures
with different Thickness

〇Keisuke Kimura¹, Noriyuki Taoka¹, Shunsuke Nishimura¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Grad. Sch. of Eng., Nagoya Univ.)

Oral presentation

[16p-D511-1~11] 15.5 Group IV crystals and alloys

Thu. Mar 16, 2023 1:30 PM - 4:15 PM D511 (Building No. 11)

Katsunori Makihara(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[16p-D511-1] [The 44th Young Scientist Award Speech] Formation of epitaxial GeH films/Ge and their heat conduction characteristics for the application of thermoelectric generation

〇Yuto Uematsu¹, Tsukasa Terada¹, Kento Sato¹, Takafumi Ishibe¹, Yoshiaki Nakamura¹ (1.Osaka Univ.)

1:45 PM - 2:00 PM

[16p-D511-2] Low-temperature thermoelectric properties of Ge_1−xSn_x films on semi-insulating substrates

Yukihiro Imai¹, Masaya Nakata¹, Masatoshi Kimura², Takayoshi Katase², Toshio Kamiya², Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,3, 〇Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.MSL, Tokyo Tech., 3.IMaSS, Nagoya Univ.)

2:00 PM - 2:15 PM

△ [16p-D511-3] A big thermoelectric power observed for heavily n-doped Si_1−xSn_x films

〇Tatsuki Oiwa¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2, Takayoshi Katase³, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.MSL, Tokyo Tech.)

2:15 PM - 2:30 PM

[16p-D511-4] Effect of Sn doping on epitaxial Ge grown on a ferromagnetic Heusler alloy Co₂FeSi

〇(M1)Shuhei Kusumoto¹, Michihiro Yamada^2,3, Atsuya Yamada¹, Youya Wagatsuma⁴, Kentarou Sawano⁴, Kohei Hamaya^1,3,5 (1.GSES, Osaka Univ., 2.JST-PRESTO, 3.CSRN, Osaka Univ., 4.Tokyo City Univ., 5.OTRI, Osaka Univ.)

2:30 PM - 2:45 PM

[16p-D511-5] Formation of high-Sn-content Ge_1−xSn_x(111) epitaxial thin layer with high crystallinity

〇Shunsuke Mori¹, Shigehisa Shibayama¹, Yoshiki Kato², Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,3 (1.Grad. Sch. Eng. Nagoya Univ., 2.Sch. Eng. Nagoya Univ., 3.IMaSS, Nagoya Univ.)

2:45 PM - 3:00 PM

▲ [16p-D511-6] Tensile lattice strain in embedded wire structures of Ge grown on Si substrate

〇(M1)JOSHUA CHOMBO¹, Bin Amin Mohd Faiz¹, Takeshi Hizawa¹, Jose A. Piedra-Lorenzana¹, Mingjun Jiang², Donghwan Ahn², Kazumi Wada³, Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech., 2.Kookmin Univ., 3.MIT)

3:00 PM - 3:15 PM

▲ [16p-D511-7] CVD growth of Ge epitaxial layer on patterned Si substrate (2)

〇(M2)FAIZ FAIZ MOHD¹, Jose A. Piedra-Lorenzana¹, Takeshi Hizawa¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1.Toyohashi Uni of Tech, 2.SUMCO)

3:15 PM - 3:30 PM

[16p-D511-8] Diode characteristics and room temperature EL emission of
strained SiGe/Ge quantum well LEDs

〇Shuya Kikuoka¹, Youya Wagatsuma¹, Yuwa Sugiura¹, Rena Kanesawa¹, Michihiro Yamada^3,4, Kohei Hamaya^2,4,5, Kentarou Sawano¹ (1.Tokyo City Univ., 2.GSES, Osaka Univ., 3.JST-PRESTO, 4.CSRN, Osaka Univ., 5.OTRI, Osaka Univ.)

3:30 PM - 3:45 PM

[16p-D511-9] Effects of increased etching rate by using laser marker on fabrication of Ge-on-Insulator(111) structure

〇Miyu Takamatsu¹, Yuya Wagatsuma¹, Yuichi Sakurai¹, Shion Sano¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

3:45 PM - 4:00 PM

△ [16p-D511-10] Evaluation of 3-Dimensional Self-Ordered Multilayered SiGe Nanodots by Photoluminescence and Raman spectroscopy

〇Yuta Ito¹, Ryo Yokogawa^1,2, Wei-Chen Wen³, Yuji Yamamoto³, Sho Sugawa¹, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.IHP)

4:00 PM - 4:15 PM

[16p-D511-11] Investigation of Strain-Free Raman Shift for All Mode in SiGe using Bulk SiGe

〇Ryo Yokogawa^1,2, Sho Sugawa¹, Yuki Shibayama¹, Yasutomo Arai³, Ichiro Yonenaga⁴, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.JAXA, 4.Tohoku Univ.)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[15p-PA06-1~4] 15.5 Group IV crystals and alloys

[15p-PA06-1] Strain Distributions of Carbon-doped Silicon Nanowires along [100] or [110] using X-ray Reciprocal Space Mapping

▲ [15p-PA06-2] Formation of SiO₂ Layer on SiGe/Si Nano-structures using Plasma-enhanced Atomic Layer Deposition

[15p-PA06-3] Suppression of crack generation in strained SiGe/Ge multiple quantum wells formed on Ge-on-Si(111)

[15p-PA06-4] Formation of SiGe/Ge heterostructures on Gd₂O₃-on-Si(111)

[16a-D511-1~10] 15.5 Group IV crystals and alloys

[16a-D511-1] Solid-Phase Crystallization of Sn-Doped Si Thin-Films on Insulator

△ [16a-D511-2] Laser-induced Liquid-phase Crystallization and Optical Characterization of GeSn Wires on Si substrate

▲ [16a-D511-3] Optical properties of highly strained n-Ge films grown by CW laser annealing

[16a-D511-4] Exploration of under layers for improving solid phase crystallized Ge thin films

△ [16a-D511-5] Selective nucleation in GeSn layers for high-speed thin-film transistors

[16a-D511-6] Solid phase crystallization of tensile-strained Ge_1−xSn_x films on Si(001) substrates

[16a-D511-7] Solid phase crystallization of amorphous Ge / Mg / SiO₂ stacked structure

[16a-D511-8] Surface Segregation of Si and Ge on Al/Si_0.2Ge_0.8(111) Structure by Annealing

▲ [16a-D511-9] Temperature dependence of GeS crystallization by vapor transport method

[16a-D511-10] Formation of Ultra-thin Nickel Silicide on SiO₂using Si/Ni/Si Structures
with different Thickness

[16p-D511-1~11] 15.5 Group IV crystals and alloys

[16p-D511-1] [The 44th Young Scientist Award Speech] Formation of epitaxial GeH films/Ge and their heat conduction characteristics for the application of thermoelectric generation

[16p-D511-2] Low-temperature thermoelectric properties of Ge_1−xSn_x films on semi-insulating substrates

△ [16p-D511-3] A big thermoelectric power observed for heavily n-doped Si_1−xSn_x films

[16p-D511-4] Effect of Sn doping on epitaxial Ge grown on a ferromagnetic Heusler alloy Co₂FeSi

[16p-D511-5] Formation of high-Sn-content Ge_1−xSn_x(111) epitaxial thin layer with high crystallinity

▲ [16p-D511-6] Tensile lattice strain in embedded wire structures of Ge grown on Si substrate

▲ [16p-D511-7] CVD growth of Ge epitaxial layer on patterned Si substrate (2)

[16p-D511-8] Diode characteristics and room temperature EL emission of
strained SiGe/Ge quantum well LEDs

[16p-D511-9] Effects of increased etching rate by using laser marker on fabrication of Ge-on-Insulator(111) structure

△ [16p-D511-10] Evaluation of 3-Dimensional Self-Ordered Multilayered SiGe Nanodots by Photoluminescence and Raman spectroscopy

[16p-D511-11] Investigation of Strain-Free Raman Shift for All Mode in SiGe using Bulk SiGe

Authenticate

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[15p-PA06-1~4] 15.5 Group IV crystals and alloys

▲ [15p-PA06-2] Formation of SiO2 Layer on SiGe/Si Nano-structures using Plasma-enhanced Atomic Layer Deposition

[16a-D511-1~10] 15.5 Group IV crystals and alloys

△ [16a-D511-2] Laser-induced Liquid-phase Crystallization and Optical Characterization of GeSn Wires on Si substrate

▲ [16a-D511-3] Optical properties of highly strained n-Ge films grown by CW laser annealing

△ [16a-D511-5] Selective nucleation in GeSn layers for high-speed thin-film transistors

▲ [16a-D511-9] Temperature dependence of GeS crystallization by vapor transport method

[16p-D511-1~11] 15.5 Group IV crystals and alloys

△ [16p-D511-3] A big thermoelectric power observed for heavily n-doped Si1−xSnx films

▲ [16p-D511-6] Tensile lattice strain in embedded wire structures of Ge grown on Si substrate

▲ [16p-D511-7] CVD growth of Ge epitaxial layer on patterned Si substrate (2)

△ [16p-D511-10] Evaluation of 3-Dimensional Self-Ordered Multilayered SiGe Nanodots by Photoluminescence and Raman spectroscopy

Authenticate

▲ [15p-PA06-2] Formation of SiO₂ Layer on SiGe/Si Nano-structures using Plasma-enhanced Atomic Layer Deposition

△ [16p-D511-3] A big thermoelectric power observed for heavily n-doped Si_1−xSn_x films