[15a-B410-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

▲ [15a-B410-1] Investigation of the Gate Oxide of Si MOS Devices Fabricated Using Minimal Fab Laser Annealing Tool

〇Mickael Lozach¹, Kazushige Sato^1,2, Sommawan Khumpuang^1,3, Shiro Hara^1,3,4 (1.Minimal Fab, 2.Sakaguchi E.H. VOC, 3.AIST, 4.Hundred)

Keywords:Gate oxide, lifetime, Laser annealing

We investigate the quality of the gate oxide of silicon MOS devices fabricated using Minimal Fab laser annealing tool and compared it to a gate oxide fabricated by Minimal Fab furnace heating. To characterize the two types of heating processes, the lifetime of minority carriers measured by micro-photoconductance decay (μ-PCD) is performed to evaluate the passivation quality. A higher lifetime is related to a lower density of interface states (D_it) between the oxide gate and the silicon substrate. Besides, the optical properties are measured by spectroscopic ellipsometry (SE) and the Si-O binding is evaluated by Fourier Transform Infra-Red (FTIR). Minimal Fab is an advanced, cost-effective, semiconductor fab where the area that requires a clean environment is minimized to the surrounding of the silicon wafers (diameter of 12.5 mm), encapsulated in a shuttle (wafer vehicle) and cleaned process chambers during the full fabrication process.