[16p-A403-1~20] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

△ [16p-A403-17] Kinetics of Dangling Bonds and Open Spaces of SiCN for Surface for Plasma Activated Direct Bonding

〇Sodai Ebiko¹, Koki Onisi¹, Fuya Nagano², Akira Uedono³, Fumihiro Inoue¹ (1.Yokokoku Univ., 2.imec, 3.Univ. of Tsukuba)

Keywords:hybrid bonding, chiplet, 3D integration