[16p-A403-1~20] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[16p-A403-7] Energy-efficient Annealing Process of HfO₂-based Ferroelectric Capacitor using UV-LED for Green Manufacturing

〇Hirotaka Yamada^1,2, Satoru Furue¹, Takehiko Yokomori¹, Yuki Itoya², Takuya Saraya², Toshiro Hiramoto², Masaharu Kobayashi^2,3 (1.Ushio Inc., 2.IIS, Univ. of Tokyo, 3.d.lab, Univ. of Tokyo)

Keywords:Ferroelectric capacitor, LED anneal

Crystallization of ferroelectric Hf_0.5Zr_0.5O₂ (HZO) capacitors with TiN electrodes is demonstrated using ultraviolet (UV)-LED annealing process, for the first time. The ferroelectric characteristics obtained by this method are comparable to those achieved by conventional infrared (IR)-RTA process at 400℃ ~450℃. Since the absorptance of the ferroelectric films is highest in UV region, the UV-LED annealing process is promising to achieve much higher energy-efficient annealing process than the conventional IR-RTA method for green manufacturing.