9:15 AM - 9:30 AM
[17a-A403-2] Relationship between electron velocity overshoot effects and gate length in Si nanosheet FETs
Keywords:nanosheet, TCAD
Presentation information
Oral presentation
13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies
[17a-A403-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies
Fri. Mar 17, 2023 9:00 AM - 11:45 AM A403 (Building No. 6)
Kiyoshi Takeuchi(Univ. of Tokyo)