[1P01-52] Poster Presentation

[1P14] Topological domain walls induced by lithium intercalation in graphene

Yukihiro Endo¹, Xue Yan², Meng Li³, *Ryota Akiyama¹, Christian Brand², Jefferson Zhe Liu², Rei Hobara¹, Shuji Hasegawa¹, Weishi Wan⁴, Konstantin Sergeevich Novoselov⁵, Wen-Xin Tang³ (1. Department of Physics, The University of Tokyo, 2. Department of Mechanical Engineering, The University of Melbourne, 3. College of Materials Science and Engineering, Chongqing University, 4. ShanghaiTech University, 5. Institute for Functional Intelligent Materials)

Atomic intercalation can modulate the stacking structure of van der Waals materials without a highly technical protocol nor a limitation for the sample size, which could be a promising technique for stacking engineering. Here, we report that Li-intercalation into epitaxial graphene on SiC (0001) drives topological domain walls (TDWs) that separate different stacking regions in graphene/buffer layers (bilayer system). We observe two important facts by low energy electron microscope: (i) Li-intercalation into the bilayer system proceeds from initial AA stacking to initial AB stacking regions. (ii) TDWs are nonvolatile by the topological protection attributed to the difference in the number of unit cells between the buffer and graphene layers. The stacking-dependent intercalation and the dynamic evolution of TDWs are key phenomena for realizing the wafer-scale, controllable stacking engineering for vdWs layered materials not just for graphene.