[1P01-52] Poster Presentation

[1P23] Creation of three-dimensional Si lined structures with atomically ordered faceted surfaces and sharpen edges

*Yasunari Kimoto¹, Wataru Imayama¹, Mabarroh Ni’matil¹, Kanako Tsubosaki¹, Ken Hattori¹, Azusa Hattori², Hidekazu Tanaka², Daisetsu Toh³ (1. Nara Institute of Science and Technology, 2. The Institute of Scientific and Industrial Research (ISIR: SANKEN), Osaka University, 3. Physical Engineering & Precision Engineering, Osaka University)

We are aiming to create sub µm scale 3D Si structures that both have sharp edge shape and surface order. However, edge shape and surface order are in a trade-off relationship during the high-temperature flash annealing process, so it is necessary to create surface order by low-temperature heating to keep the edge shape. Therefore, we aimed to create atomically ordered faceted surfaces and sharp-edged structures in sub-µm-scale 3D Si line structures by introducing pretreatment of RCA cleaning process. As a result, it was confirmed that the RCA-cleaned sample shows stronger surface order from flash annealing at 850°C, which is lower temperature than that of the uncleaned sample, indicating that RCA cleaning is effective for surface order formation at low temperature heating. We optimized the flash annealing temperature of the RCA-cleaned 3D Si sample and succeeded in creating sub-µm-scale Si line structures with both edge shape and surface order.