Proceedings of the International Display Workshops Volume 29 (IDW '22)

Dec 14, 2022 - Dec 16, 2022
Fukuoka International Congress Center

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340 results (91 - 100)

[FMCp1-5] COG 2.45mm-down-border based on 10mask

*YUAN YUAN ZHONG¹, XUEXIN LAN¹, CHUNRONG LIN¹, JIE LIN¹, SHANGFU CAI¹, YUTIAN LIU¹, BAILING TANG¹, WANYU SU¹, CHANGJUAN ZHANG¹, GUOZHAO CHEN¹, XIANYAN YANG¹ (1.Xiamen Tianma Microelectronics Co. (China))

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[FMCp1-7L] Image Based Objects’ Transparency Measurement by a Polarization Camera

*Pei-Yu Lai¹, Tzung-Han Lin¹ (1.National Taiwan University of Science and Technology (Taiwan))

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[FMCp2-1] Improvement of Color Mura by Using a Triple-Zero-Birefringence Polymer Film

*Shizuki Sasaki¹, Yasuhiro Koike^1,2 (1.Keio University (Japan), 2.Keio Photonics Research Institute (Japan))

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[FMCp2-2] Semiconductor Nanorods for Micro LED Down Conversion with Alleviated Temperature Effect

*Jianxin SONG¹, Chengbin KANG¹, Maksym Prodanov¹, Abhishek Kumar SRIVASTAVA¹ (1.Hong Kong University of Science and Technology (Hong Kong))

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[FMCp2-3L] Evaluation of Dielectric Loss in Randomly-Aligned Liquid Crystal Molecules for Millimeter-Wave Reflect Array Antenna

*Yosei Shibata¹, Yasuo Yamamoto¹, Takahiro Ishinabe¹, Hiroyasu Sato¹, Qiang Chen¹, Hideo Fujikake¹ (1.Tohoku University (Japan))

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[FMCp2-4L] Formation of Nano-Sized Crystals of Organic Phosphor on Substrate with Fine-Hole Structure

*Yuma Ono¹, Yosei Shibata¹, Takahiro Ishinabe¹, Hideo Fujikake¹ (1.Tohoku University (Japan))

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[FMCp3-1] Zinc Tin Oxide Synaptic Transistor with Ion-gel in Different Concentrations for Neuromorphic Application

Yu-Wu Wang¹, Wen-Yu Liao¹, *Chen En Zhang¹, Yu-Hong Xie¹, Pei-Yun Huang¹, Yu-Han Cheng¹ (1.National Chan-Hua University of Education (Taiwan))

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[FMCp3-2] the novel Technology Development of 7Mask for LTPS-LCD

*Dandan Yan¹, Xuexin Lan¹, Bingping Liu¹, Yanshan Huang¹, Xiaoxiao Wu¹, Xiangkang Wei¹, Honghong Nie¹, Keshi Yang¹, Chao Deng¹, Guozhao Chen¹, Xianyan Yang¹ (1.Xiamen Tianma Microelectronics Co. (China))

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[FMCp3-3] A Study of Spin Coated a-IGZO TFT with Y-doped ZrO₂ Gate Insulators

EunKyung Jo¹, Jeong Hyun Ahn¹, Tae Eun Ha¹, *Eunho Kim¹, Hwarim Im¹, Yong-Sang Kim¹ (1.Sungkyunkwan University (Korea))

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[FMCp3-4] Cu Process Development of 43UD DRD TFT Architecture by Halftone Photolithography 4-Mask Technology

*An-Thung Cho¹, Wei-wei Hu¹, Ren-hong Zhan¹, Wen-bing Wu¹, Ning-ning Li¹, Wan-fei Yong¹, James Hsu¹, Wade Chen¹ (1.ChuZhou HKC Optoelectronics Technology Co., Ltd., China (China))

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340 results (91 - 100)