Proceedings of the International Display Workshops Volume 29 (IDW '22)

Dec 14, 2022 - Dec 16, 2022
Fukuoka International Congress Center

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[AMD6-2 (Invited)] Impact of Cyber-Physical Systems on Research and Development of Semiconductor Devices

*Hiroshi Ikenoue¹, Keita Katayama¹, Yoshiaki Kakimoto¹, Toshifumi Kikuchi¹, Daisuke Nakamura¹ (1.Kyushu University (Japan))

Proceedings of the International Display Workshops Volume 29 (IDW '22) |Fri. Dec 16, 2022 11:10 AM - 11:30 AM |PDF Download

[AMD6-3L] TFT-type Strain Sensors for Implementing Hidden Pixel Structure in Active-Matrix Stretchable Displays

*Won Kyung Min¹, Jong Bin An¹, Dong Hyun Choi¹, Jusung Chung¹, Gwan In Kim¹, Moon Ho Lee¹, Seok Gyu Hong¹, Hyun Jae Kim¹ (1.Yonsei University (Korea))

Proceedings of the International Display Workshops Volume 29 (IDW '22) |Fri. Dec 16, 2022 11:30 AM - 11:50 AM |PDF Download

[AMD7-1 (Invited)] Driving Methods for Improving Image Quality in LTPS and LTPO-based AMOLED Displays

Won Kyung Min¹, Hyung Tae Kim¹, Hyunji Son¹, Seok Gyu Hong¹, Se Hwan Na¹, Li Jin Kim¹, Jung Chul Kim¹, *Hyun Jae Kim¹ (1.Yonsei University (Korea))

Proceedings of the International Display Workshops Volume 29 (IDW '22) |Fri. Dec 16, 2022 1:30 PM - 1:50 PM |PDF Download

[AMD7-2 (Invited)] Layer Reduction of Hybrid TFT Towards 6.6 inch AMOLED Mass Production

*Shunsuke Kobayashi¹, Yujiro Takeda¹, Masatomo Honjyo¹, Mehadi Aman¹, Kenichi Kitoh¹, Kazuatsu Ito¹, Kohei Tanaka¹, Hiroshi Matsukizono¹ (1.Sharp Display Technology Corporation (Japan))

Proceedings of the International Display Workshops Volume 29 (IDW '22) |Fri. Dec 16, 2022 1:50 PM - 2:10 PM |PDF Download

[AMD7-3] A Dual-Output Scan Driver Circuit employing LTPO TFTs for Mobile Displays

Ye-Rim Jeong¹, Eun Kyo Jung¹, Eunho Kim¹, Hwarim Im¹, *Yong-Sang Kim¹ (1.Sungkyunkwan University (Korea))

Proceedings of the International Display Workshops Volume 29 (IDW '22) |Fri. Dec 16, 2022 2:10 PM - 2:30 PM |PDF Download

[AMDp1-1] Electric Field Thermopower Modulation Analyses of Effective Channel Thickness of Amorphous InGaO₃(ZnO)_m Thin Film Transistors

*Prashant Ghediya¹, Hui Yang^1,2, Takashi Fujimoto¹, Yuqiao Zhang^3,4, Yasutaka Matsuo¹, Yusaku Magari¹, Hiromichi Ohta¹ (1.Hokkaido University (Japan), 2.Beijing Jiaotong University (China), 3.Jiangsu University (China), 4.Foshan Institute for New Materials (China))