[A-3-4] Analytical Techniques for the Design of DMOS Transistors

Toshiaki Masuhara, Richard S. Muller (1.Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory University of California)

1976 International Conference on Solid State Devices |PDF Download

[A-3-5] Grooved Gate MOSFET

S. Nishimatsu, Y. Kawamoto, H. Masuda, R. Hori, O. Minato (1.Central Research Laboratory, Hitachi Ltd.)

1976 International Conference on Solid State Devices |PDF Download

[A-3-6] Electronic Watches Using Quartz Crystal Oscillators

T. Hama (1.Suwa Seikosha Co., Ltd.)

1976 International Conference on Solid State Devices |PDF Download

[A-3-7] Nonvolatile Semiconductor Memory

Yoshio Nishi, Hisakazu Iizuka (1.Toshiba Research and Development Center Tokyo Shibaura Electric Co., Ltd.)

1976 International Conference on Solid State Devices |PDF Download

[A-3-8] New Two-Terminal C-MNOS Memory Cells

Susumu Koike, Gota Kano, Akio Kashiwakura, Ginjiro Kambara, Iwao Teramoto (1.Research Laboratory, Matsushita Electronics Corporation)

1976 International Conference on Solid State Devices |PDF Download

[A-3-9] Studies of Localized Charge Injection in Surface Avalanched PN Junctions

R. Amantea, R. S. Muller (1.Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory University of California)

1976 International Conference on Solid State Devices |PDF Download

[A-4-1] Power Handling Capability of MOSFET

Minoru NAGATA (1.Central Research Laboratory, Hitachi, Ltd.)

1976 International Conference on Solid State Devices |PDF Download

[A-4-2] Deep Levels in GaAs and GaP

T. Ikoma, M. Takikawa, T. Okumura (1.Institute of Industrial Science, University of Tokyo)

1976 International Conference on Solid State Devices |PDF Download

[A-4-3] Optical Compensation Profiling in Direct-Gap Epitaxial Layers

E. Wagner, W. Bludau, T. Kamiya (1.Max-Planck Institut fur Festkorperforschung, 2.Department of Electronic Engineering, University of Tokyo)

1976 International Conference on Solid State Devices |PDF Download

[A-4-4] LIQUID-PHASE EPITAXIAL GROWTH, ELECTRON VELOCITY, AND MAXIMUM DRIFT VELOCITTY OF In1-xGaxAs(x≒0.5) FOR MICROWAVE DEVICES

A. Sasaki, Y. Takeda, N. Shikagawa, T. Takagi (1.Department of Electronics, Kyoto University)

1976 International Conference on Solid State Devices |PDF Download