[D-2-1] X-Ray Diffraction Analysis of Stoichiometry of GaAs Crystals

Isao Fujimoto (1.Broadcasting Science Research Laboratories of NHK)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-2] Deep Levels Due to Induced Dislocations in Vapor Phase Epitaxial GaAs

Fumio HASEGAWA、Norio YAMAMOTO、Yasuo NANNICHI (1.Institute of Material Science, University of Tsukuba)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-3] Correlation between Dominant Deep PL Bands and Fermi Level in Undoped LEC SI-GaAs

Toshio KIKUTA、Haruo EMORI、Tsuguo FUKUDA、Koichi ISHIDA (1.Optoelectronics Joint Research Laboratory)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-4] Characterization of Residual Stress in Semi-Insulating GaAs:Cr by Photoluminescence Method

Y. FUJIWARA、A. KOJIMA、T. NISHINO、Y. HAMAKAWA、K. YASUTAKA、M. UMENO、H. KAWABE (1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University、2.Department of Precision Engineering, Faculty of Engineering, Osaka University)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-5] C-V Profiling Studies on MBE-Grown GaAs/AlGaAs Heterojunction Interface

Miyoko O. Watanabe、Jiro Yoshida、Masao Mashita、Takatosi Nakanisi、Akimichi Hojo (1.Toshiba Research and Development Center)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-1] Raman Spectroscopy for Characterization of Smiconductor Materials and Surfaces

Takashi Katoda (1.Institute of Interdisciplinary Research Faculty of Engineering The University of Tokyo)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-2] Schottky Characteristics and Interfacial Defects in Tungsten Silicide/GaAs and Palladium/GaAs Systems

T. Makimoto、M. Taniguchi、K. Ogiwara、T. Ikoma、T. Okumura (1.Institute of Industrial Science, University of Tokyo、2.Tokyo Metropolitan University)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-3] Electrical Properties of Surface Defects on Molecular Beam Epitaxially Grown GaAs Layers and Defect Free Growth Procedures

Masanori Shinohara、Tomonori Ito、Kazumi Wada、Yoshihiro Imamura (1.Atsugi Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-4] Initial Oxidation Stage of AlxGa1-xAs and (Al, Ga)0.5In0.5P Surfaces Studied by Photoemission Spectroscopy

Toshitaka TORIKAI、Masaki OGAWA (1.Opto-Electronics Research Laboratories, Fundamental Research、2.Laboratories, NEC Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-5] Compositional Inhomogeneity of InGaAsP/GaAs LPE Layer by Precision X-Ray Diffractometry

Kazumasa Hiramatsu、Kazuyoshi Tomita、Nobuhiko Sawaki、Isamu Akasaki (1.Department of Electronics, School of Engineering Nagoya University)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード