[LD-6-4] High Power and High Temperature Operation of InGaAsP/InP Buried Crescent Laser Diode emitting at 1.3μm

Y. SAKAKIBARA、E. OOMURA、H. HIGUCHI、Y. NAKAJIMA、H. NAMIZAKI、K. IKEDA、W. SUSAKI (1.LSI Research & Development Laboratory, Mitsubishi Electric Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-6-5] Temperature dependence of the radiative recombination coefficient in (Al, Ga)As quantum wells

G. W. 't Hooft、M. R. Leys、H. J. Thalen v. d. Mheen (1.Philips Research Laboratories)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-6-6] Optimum Design and Performance of GaAlAs/GaAs MQW Lasers with Very Thin Wells

P. W. A. McIlroy、H. Furuyama、M. Mashita、Y. Ashizawa、Y. Uematsu (1.Toshiba R & D Center, Toshiba Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-6-7] Computer Controlled Phase-Locked Epitaxy(PLE) of (GaAs)n(AlAs)n using RHEED Oscillation

T. Sakamoto、H. Funabashi、K. Ohta、T. Nakagawa、N. J. Kawai、T. Kojima (1.Electrotechnical Laboratory、2.Japan Aviation Electronics Industry Co. Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-6-8] Direct Observation of AlxGa1-xAs/GaAs Superlattice by REM

N. Yamamoto、S. Muto (1.Physics Department, Tokyo Institute of Technology、2.Fujitsu Limited)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-6-9] LPE SEPARATE CONFINEMENT InGaAsP/GaAs AND InGaAsP/InP DH LASERS WITH VERY LOW THRESHOLD

Zh. I. Alferov、D. Z. Garbuzov、I. N. Arsent'ev (1.A.F. Ioffe Physical-Technical Institute, USSR Academy of Sciences)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-7-1] XeCl EXCIMER LASER OXIDATION OF Si EMPLOYING O2/Cl2 GAS MIXTURE

Keiji HORIOKA、Haruo OKANO、Yasuhiro HORIIKE (1.Toshiba VLSI Research Center, Toshiba Corp.)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-7-2] Computer Controlled Direct Pattern Writing by Argon Laser Induced Chemical Vapor Deposition

Akira Ishizu、Hidejiro Miki、Yoichiro Onishi Tadashi Nishimura、Yoichi Akasaka (1.Materials & Electronic Devices Lab., Mitsubishi Electric、2.LSI Research & Development Lab., Mitsubishi Electric)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-7-3] Advanced technique to decrease defect density in molecular-beam-epitaxial silicon film

Naoaki Aizaki、Toru Tatsumi、Hideki Tsuya (1.Fundamental Research Laboratories, NEC Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-7-4] Self-cleaning by silicon Beam in Molecular Beam Epitaxy

N. Matsuo、Y. Hirofuji、K. Kugimiya (1.Central Research Lab., Matsushita Electric Industrial Co., Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード