[LD-5-3] A New InGaAsP/InP Heterobipolar Laser Transistor

Yoshihiro Mori、Jun Shibata、Yoichi Sasai、Nobuyasu Hase、Hiroyuki Serizawa (1.Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-5-4] ENHANCEMENT-MODE GaInAs MISFET'S WITH X-BAND OPERATION

Tomohiro ITOH、Keiichi OHATA (1.Microelectronics Research Laboratories, NEC Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-5-5] CURRENT-DRIFT SUPPRESSED InP MISFETS WITH A NEW GATE INSULATOR

Osamu MIKAMI、Masamichi OKAMURA、Eiichi YAMAGUCHI、Yukihiro HIROTA、Yoshitaka FURUKAWA (1.Musashino Electrical Communication Lab., NTT)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-5-6] A TWO-DIMENSIONAL ELECTRON GAS IN A NEW TYPE OF HETEROSTRUCTURE, InP/n-AlInAs

M. Inoue、S. Nakajima (1.Osaka Institute of Technology, Department of Electrical Engineering、2.Osaka University, Department of Electrical Engineering、3.Sumitomo Electric Indus. Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-5-7] Planar GaAlAs/GaAs Heterojunction Bipolar Transistors

K. Morizuka、M. Obara、K. Tsuda、M. Asaka、H. Tamura、M. Mashita、J. Yoshida、A. Hojo (1.Toshiba R&D Center、2.Electron Device Engineering Lab., Toshiba Corp.)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-5-8] GaAs DFET Logic operated on Single Supply Voltage

Shoichi Shimizu、Yukio Kamatani (1.Toshiba Research and Development Center)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-5-9] A 2 ns GaAs 4kb SRAM Using a Dislocation Free LEC Crystal

M. IDDA、H. YAMAZAKI、N. KATO、M. OHMORI (1.Atsugi Electrical Communication Laboratory, NTT)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-6-1] 626.2 nm PULSED OPERATION (300K) OF AN MOCVD GROWN AlGaInP DOUBLE HETEROSTRUCTURE LASER

Kenichi KOBAYASHI、Isao HINO、Tohru SUZUKI (1.Opto-Electronics Research Labs., NEC Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-6-2] Cw operation of an AlGaInP DH laser diode at 77 K grown by atmospheric MOCVD

M. Ikeda、Y. Mori、M. Honda、K. Kaneko、N. Watanabe (1.Sony corporation Research Center)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LD-6-3] LOW THRESHOLD CURRENT OPERATION FOR 0.65μm InGaAsP/GaAsP VISIBLE LASER DIODE

I. Mito、M. Inai、T. Matsumoto、A. Usui、K. Kobayashi (1.Opto-Electronics Res. Labs., Fundamental Res. Labs., NEC Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード