[B-2-3] Interface Stress at InGaPAs/GaAs Heterojunction

Sho SHIRAKATA、Yasufumi FUJIWARA、Masahiko KONDO、Taneo NISHINO、Yoshihiro HAMAKAWA (1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-4] Reduction of the High Resistive Layer at the Interrupted-Interface of GaAs Grown by MBE

H. TAKASUGI、Y. IIMURA、M. KAWABE (1.Institute of Materials Science, University of Tsukuba)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-5] Growth of Single Domain GaAs on Si(100) by Molecular Beam Epitaxy

Seiji Nishi、Masahiro Akiyama、Katsuzo Kaminishi (1.Research Laboratory, Oki Electric Industry Co., Ltd.)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-6] Formation of GaAs-SOI on Si Substrates by Use of Fluoride Insulators

Tanemasa ASANO、Hiroshi ISHIWARA、Hee Chul LEE、Kazuo TSUTSUI、Seijiro FURUKAWA (1.Graduate School of Seience and Engineering, Tokyo Institute of Technology)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-1] Atomic-Layer Epitaxy of ZnSe and ZnTe Single Crystalline Films and its Application to the Fabrication of ZnSe /ZnTe Superlattices

T. Takeda、T. Yao、T. Kurosu、M. Iida (1.Electrotechnical Laboratory、2.Tokai University)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-2] Single Crystal Growth of ZnS by the MBE Method Using H2S Gas Source

Shigeo Kaneda、Shuji Satou、Takao Setoyama、Shin-ichi Motoyama、Meiso Yokoyama、Norio Ota (1.Technological University of Nagaoka、2.Nippon Seiki Co. Ltd.)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-3] High Electron-Mobility ZnSe Films Grown by Low-Pressure MOCVD

A. Yoshikawa、S. yamaga、K. Tanaka、H. Oniyama、H. Kasai (1.Department of Electronic Engineering, Chiba University)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-4] Lattice Matched Epitaxial Growth of ZnSSe on GaAs by MOCVD

A. Kamata、K. Hirahara、M. Kawachi、T. Beppu (1.Toshiba R&D Center, Toshiba Corporation)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-5] Hydrogen Radical Assisted CVD of ZnSe

S. Oda、R. Kawase、I. Shimizu、H. Kokado (1.The Graduate School at Nagatsuta and Imaging Science and Engineering Laboratory, Tokyo Institute of Technology)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-6] Multi-Layered Structure of GaAs/ZnSe by Plasma-Assisted Epitaxy

K. Matsushita、H. Sato、O. Osada、S. F. Fang、K. Shida、T. Hariu、Y. Shibata. (1.Department of Electronic Engineering, TOHOKU UNIVERSITY)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード