[C-11-5] Deep Level Characterization for Aluminum Doped ZnSe Grown by MOCVD

A. Kamata, Y. Zohta, M. Kawachi, T. Sato, M. Okajima, K. Hirahara, T. Beppu (1.Toshiba R&D Center, Toshiba Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-8-1] Microwave Absorption Transient Spectroscopy for Investigation of Deep Levels in Semiconductors

Youichi Tamura, Chihiro Hamaguchi (1.Department of Electronics Engineering, Faculty of Engineering, Osaka University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-8-2] Two-Dimensional High-Resolution EL2 Topography in Thin Semi-Insulating LEC-Grown GaAs Wafers

H. Ch. Alt, G. Packeiser (1.Siemens AG, Research Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-8-3] Plasma CVD of Amorphous AIN Films from Metal Organic Al Source

Fumio HASEGAWA, Tsuyoshi TAKAHASHI, Isao ONODERA, Yasuo NANNICHI (1.Institute of Materials Science, University of Tsukuba)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-8-4] An Approximate Form of the "Lucky-Drift" Expression for Ionisation Coefficients Used in Evaluation of Superlattice Structures

J. S. Marsland, R. C. Woods (1.Department of Electronic & Electrical Engineering, Sheffield University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-10-1] Diode Characteristics of Doping-Modulated Multilayers of Amorphous Silicon

I. Chen, H. Steemers, J. Mort, M. Machonkin (1.Xerox Webster Research Center)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-10-2] Resonant Tunneling Through Amorphous Silicon/Silicon Nitride Double Barrier Structures

Seiichi Miyazaki, Yohji Ihara, Masataka Hirose (1.Department of Electrical Engineering, Hiroshima University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-10-3] Hot Electron Generation Using Amorphous Super Structure of Si:H/Si1-xCx:H

Masahiro YOSHIMOTO, Takashi FUYUKI, Hiroyuki MATSUNAMI (1.Department of Electrical Engineering, Kyoto University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-10-4] Visible Light a-SiC Multilayered Thin Film LED

Dusit KRUANGAM, Masahiro DEGUCHI, Toshihito ENDO, Wei Guang-Pu, Hiroaki Okamoto, Yoshihiro HAMAKAWA (1.Faculty of Engineering Science, Osaka University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-10-5] Superlattice Structure a-Si Films Prepared by Photo-CVD Method and Their Application to a-Si Solar Cells.

H. Tarui, T. Matsuyama, S. Tsuda, Y. Hishikawa, T. Takahama, S. Nakayama, N. Nakamura, T. Fukatsu, S. Nakano, M. Ohnishi, Y. Kuwano (1.Research Center, Applied Research Center, SANYO Electric Co., Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download