[A-4-3] Surface Processes in Fluorine-Based Photochemical Etching of Silicon

T. Ogura, Y. Yamakage, T. Inoue, M. Hirose (1.Department of Electrical Engineering, Hiroshima University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] SiO2 Deposition by Photo-initiation

Shigehiro Nishino, Tsunenobu Kimoto, Kohtaro Furusawa, Hiroyuki Matsunami (1.Department of Electrical Engineering, Faculty of Engineering, Kyoto University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Photochemical Effects for Low-Temperature Si Epitaxy

T. Yamazaki, R. Sugino, T. Ito, H. Ishikawa (1.FUJITSU LABORATORIES LTD., ATSUGI)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] Photochemical Vapor Deposition of Single-Crystal Silicon at a Very Low Temperature of 200℃

A. Yamada, S. Nishida, M. Konagai, K. Takahashi (1.Department of Physical Electronics, Tokyo Institute of Technology)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Thin Film Formation by Radical Jet Generated by UV Laser-Induced Multi-Photon Dissociation

Y. Ichikawa, N. Itoh, H. Sakai, Y. Uchida (1.Fuji Electric Co. Research and Development, Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-5-4] XeCl Excimer Laser-Doping of Silicon Using Phosphorus and Boron Film as a Diffusant Source

S. Usui, T. Sameshima, M. Sekiya (1.Sony Corporation Research Center, 2.Sony Corporation Advanced Engineering Division)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-6-1] A New Side Wall Protection Technique in Microwave Plasma Etching Using a Chopping Method

K. Tsujimoto, S. Tachi, K. Ninomiya, K. Suzuki, S. Okudaira, S. Nishimatsu (1.Central Research Laboratory, Hitachi Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-6-2] Double-Source Excited Reactive Ion Etching and Its Application to Submicron Trench Etching

Masaaki Sato, Yoshinobu Arita (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-6-3] Depth Profiling of Silicon Nitride Films Prepared by Plasma Anodization

H. Zama, M. Hara, T. Suzuki, T. Hattori M. Hirayama, T. Matsukawa (1.Department of Electrical and Electronic Engineering Musashi Institute of Technology, 2.LSI Research and Development Laboratory Mitsubishi Electric Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-6-4] Silicon Nitride Thin Films Prepared by ECR Plasma CVD

Y. Manabe, T. Mitsuyu, O. Yamazaki (1.Central Research Laboratories Matsushita Electric Industrial Co., Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download