[B-2-4] Electrical Characteristics of Submicron Poly Si MOSFET

Tohru Ueda, Hiroaki Shimizu (1.VLSI Develop. Labs. Sharp Corp.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-2-5] PARAMOST - A New Parasitic Resistance Model for Deep Submicron MOS Transistors

Kazuo Yano, Masaaki Aoki, Toshiaki Masuhara (1.Central Research Laboratory, Hitachi Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-3-1] 1800V Non-Latch-Up Bipolar-Mode MOSFETs(IGBT) Fabricated by Silicon Wafer Direct Bonding

Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe Hiromichi Ohashi, Masaru Shimbo (1.Toshiba Research & Development Center)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] Swiching Characteristic of a High Voltage BMFET

G. Ferla, S. Musumeci G. Busatto, P. Spirito, G. Vitale (1.SGS Microelettronica, 2.University of Naples SGS Microelettronica Stradale Primosole)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] A New Injection Suppression Structure for Conductivity Modulated Power MOSFETs

Daisuke UEDA, Kazuyoshi KITAMURA, Hiromitsu TAKAGI, Gota KANO (1.Semiconductor Laboratory, Matsushita Electronics Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-3-4] High-Temperature Characteristics of CVD-Grown β-SiC p-n Junction Diodes

Akira Suzuki, Atsuko Uemoto, Mitsuhiro Shigeta, Katsuki Furukawa, Shigeo Nakajima (1.Central Research Laboratories, Engineering Center, Sharp Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-1-1] III-V Semiconductors on Si Substrates

Russ Fischer, H. Morkoc (1.University of Illinois at Urbana-Champaign Coordinated Science Laboratory)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-1-2] Initial Stage of Molecular Beam Epitaxial Growth of GaAs on (100) Si

H. TAKASUGI, T. UEDA, M. KAWABE Y. BANDO (1.Institute of Meterials Science, University of Tsukuba, 2.National Institute for Research in Inorganic Materials)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-2-1] Heteroepitaxy of GaAs on Si Grown by MOCVD and MBE

Masahiro Akiyama (1.Research Laboratory, Oki Electric Industry Co., Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-2-2] GaAs/Ge Crystal Growth on Ta2O5-Coated Si Substrates

Satoshi Oku, Yukinobu Shinoda, Yoshiro Ohmachi (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

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