[S-F-1] Perspectives on ULSI MOS Devices and Advances towards Si Quantum Devices

Eiji TAKEDA (1.Central Research Laboratory, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-F-2] Limiting Factors in High-Speed Operations of III-V HBT's and FET's

Tadao ISHIBASHI, Hiroki NAKAJIMA (1.NTT LSI Laboratories)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-F-3] Electron Transport in Mesoscopic Semiconductor Structures

Toshiaki Ikoma, Kazuhiko Hirakawa, Toshiro Hiramoto, Takahide Odagiri (1.Institute of Industrial Science, University of Tokyo)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-F-4] Quantum Interference Phenomena in GaAs/A/GaAs Electron Wave Guide

K. Ishibashi, Y. Takagaki, Y. Aoyagi, K. Gamo, S. Namba (1.Frontier Research Program, RIKEN (Institute of Physical and Chemical Research), 2.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-F-5] Exploration of Quantum-Interference and Lateral-Superstructure Devices

Hiroyuki SAKAKI (1.University of Tokyo (RCAST/ IIS) and Japan Research Development Corporation)

1989 Conference on Solid State Devices and Materials |PDF Download

[A-4-LN4] Effect of Silicon Surface Cleaning on the Initial Stage of Selective Titanium Silicide Chemical Vapor Deposition

K. Saito, T. Amazawa, Y. Arita (1.NTT LSI Laboratories)

1989 Conference on Solid State Devices and Materials |PDF Download

[B-2-LN8] Reduction of High Energy P Implantation Induced Secondary Defects in Si by Additional C Implantation

H. Goto, M. Tamura, N. Natsuaki (1.Central Research Laboratory, Hitachi, Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[B-4-LN3] W-Gate MOSFETs with Ta2O5/SiO2 Gate Insulator

M. Nakata, H. Shinriki (1.Central Research Laboratory, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[C-3-LN4] Synchrotron Radiation Photoemission Study on (NH4)2Sx-treated n-GaAs

H. Sugahara, M. Oshima, H. Oigawa, H. Shigekawa, Y. Nannichi (1.NTT Applied Electronics Laboratories, 2.Institute of Materials Science, University of Tsukuba)

1989 Conference on Solid State Devices and Materials |PDF Download

[D-7-LN6] 5:1 On-Off Contrast InGaAs /InP Multiple Quantum Well Fabry-Perot Etalon Modulator

A. Tomita, Y. Kohga, A. Suzuki, T. Terakado, A. Ajikawa (1.Opto-electronics Technology Research Laboratory, 2.Opto-electronics Research Laboratories, NEC Corporation)

1989 Conference on Solid State Devices and Materials |PDF Download