[S-C-4] Optically Coupled Three-Dimensional Common Memory with Novel Data Transfer Method

Hirokazu TAKATA, Hiroki MORI, Junichiro IBA, Mitsumasa KOYANAGI (1.Department of Electrical Engineering, Hiroshima University, 2.Research Center for Integrated Systems, Hiroshima University)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-C-5] Monolithic Electro-absorption Modulator/DFB Laser Lightsource with Semi-Insulating InP Burying Layers

M. Furutsu, H. Soda, K. Sato, N. Okazaki, S. Yamazaki, T. Okiyama, H. Ishikawa (1.Fujitsu Laboratories, Atsugi, 2.Fujitsu Laboratories, Kawasaki)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-C-6] GaAs/AlGaAs Double-Heterojunction Bipolar Transistor Carrier-Injected Optical Intensity Modulator

Y. Okada, K. Tada, R. J. Simes, L. A. Coldren, J. L. Merz (1.Department of Electronic Engineering, University of Tokyo, 2.Department of Electrical and Computer Engineering, University of California)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-C-7] Twin-PIN Photodiode with High-Speed Response at High Optical Input Power for Coherent Receiver

Hisashi HAMAGUCHI, Masao MAKIUCHI, Osamu WADA, Shigenobu YAMAKOSHI (1.FUJITSU LABORATORIES LTD.)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-D-1] Hot Carriers in FETs - Light Emission and Degradation Physics

F. Koch (1.Physik-Department E16, Tech. Univ.)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-D-2] Properties of Radiation Induced Interface States and Positive Charges in MOS Structures

Kazunori OHNISHI (1.Department of Electronic Engineering, Nihon University)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-D-3] New Evidence for Double Charged Oxide Trap of Submicron MOSFET's

Hiroshi NAKAMURA, Naoki YASUDA, Kenji TANIGUCHI, Chihiro HAMAGUCHI, Akira TORIUMI (1.Department of Electronics Engineering, Osaka University, 2.ULSI Research Center, Toshiba Corporation)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-D-4] Hot-Carrier Detrapping in Post-Stress Behavior of MOS Devices

F. E. Pagaduan, A. Hamada, C. Y. Yang, E. Takeda (1.Central Research Laboratory, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-D-5] Hot Carrier Degradation of 0.5 μm Surface and Buried Channel PMOS FETs

Katsuyoshi Mitsui, Masahide Inuishi, Shigeru Kusunoki, Hidekazu Oda, Katsuhiro Tsukamoto (1.LSI R&D Laboratory, Mitsubishi Electric Corporation)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-D-6] Mechanism Analysis of a Highly Reliable Graded Junction Gate/N- Overlapped Structure in MOS LDD Transistor

Y. Okumura, T. Kunikiyo, I. Ogoh, H. Genjo, M. Inuishi, M. Nagatomo, T. Matsukawa (1.LSI R&D Laboratory, Mitsubishi Electric Corp.)

1989 Conference on Solid State Devices and Materials |PDF Download