[S-D-7] High Reliability of Ultrathin Improved SiN on Poly Si

Shigeaki Ide, Hisakazu Miyatake, Hideo Komiya, Masatoshi Ohshima (1.VLSI Development Laboratories IC Group SHARP Corporation)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-D-8] Conduction in Thin Nitride Films and Oxide/Nitride Films

Kiyoteru Kobayashi, Hiroshi Miyatake, Makoto Hirayama (1.LSI Research & Development Laboratory, Mitsubishi Electric Corp.)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-D-9] Two Mechanisms for Interface State Generation in n-MOSFETs

Naoki YASUDA, Kenji TANIGUCHI, Chihiro HAMAGUCHI (1.Department of Electronic Engineering, Osaka University, 2.Semiconductor Device Engineering Lab., Toshiba, Corporation)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-E-1] Applications of Synchrotron Radiation to Material Characterization

Masami Ando (1.Photon Factory, KEK)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-E-2] Semiconductor Interface and Surface Structure Studies by Means of Grazing Incidence X-Ray Diffraction

Koichi AKIMOTO, Jun'ichiro MIZUKI, Ichiro HIROSAWA, Junji MATSUI (1.Fundamental Research Laboratories, NEC Corporation, 2.Research and development Group, NEC Corporation)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-E-3] Semiconductor Surface Characterization by Total Reflection X-Ray Fluorescence Analysis

Atsuo IIDA (1.Photon Factory, National Laboratory for High Energy Physics)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-E-4] X-Ray Topographic Observations of Defects in As-Grown Silicon Single Crystals

Tetsuya ISHIKAWA (1.Department of Applied Physics, The University of Tokyo)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-E-5] Ge/Si Monolayer Superlattices on Si(100) Studied by Surface-Sensitive EXAFS

Hiroyuki OYANAGI, Tsunenori SAKAMOTO, Kunihiro SAKAMOTO, Hirotaka YAMAGUCHI, Takafumi YAO (1.Electrotechnical Laboratory)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-E-6] Structure Investigation of Amorphous Silicon Nitrides by Si･K-EXAFS

Asao Nakano, Kiyoshi Ogata, Masahiro Tanaka (1.Production Engineering Research Laboratory, Hitachi, Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[S-E-7] Synchrotron Radiation Photoemission Spectroscopy of Epitaxially-Grown Fluoride Films/GaAs Interfaces

Masaharu OSHIMA, Yasuko YAMADA-MARUO, Ruth KLAUSER (1.NTT Applied Electronics Laboratories, 2.ISSP, University of Tokyo)

1989 Conference on Solid State Devices and Materials |PDF Download