[A-7-4] Substrate Engineering for VTH-Scaling at Low Supply Voltage (1.5-3 V) in ULSIs

Ryuichi Izawa、Digh Hisamoto、Eiji Takeda (1.Central Research Laboratory, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-5] High Drivability CMOSFETs with Asymmetrical Source-Drain (ASD) Structure for Low Supply Voltage ULSIs

A. Shimizu、T. Yamanaka、N. Hashimoto、T. Hashimoto、Y. Sakai、E. Takeda (1.Hitachi VLSI Engineering Corp.、2.Central Reseach Laboratory Hitachi Ltd.、3.Semiconductor Design & Development Center, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-1] A New Insight into the PN-Junction Characteristics of ULSI -The Time Dependent Junction Breakdown (TDJB)-

Hideyuki MATSUOKA、Digh HISAMOTO、Ryuichi IZAWA、Eiji TAKEDA (1.Central Research Laboratory, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-2] High Efficiency Hot Electron Injection for EEPROM Applications Using a Buried Injector

G. J. Hemink、R. C. M. Wijburg、R. Cuppens、J. Middelhoek (1.University of Twente, Faculty of Electrical Engineering、2.Philips Reaearch Laboratories)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-3] Capacitance-Enhanced Stacked-Capacitor with Engraved Storage Electrode for Deep Submicron DRAMs

T. Mine、S. Iijima、J. Yugami、K. Ohga、T. Morimoto (1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi VLSI Engineering Corp.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-4] A New Stacked Capacitor Cell with Thin Box Structured Storage Node

S. Inoue、A. Nitayama、K. Hieda、F. Horiguchi (1.ULSI Research Center, TOSHIBA Corporation)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-5] Collected Charge Enhancement due to Alpha Particle in an n-extremely thin p-n+ Structure

H. Nambu、Y. Idei、K. Kanetani、K. Yamaguchi、N. Homma、K. Ohhata、Y. Sakurai (1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi Device Engineering Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-1] Perfect-Selectivity Directional Etching of Silicon Using Ultraclean ECR Plasma

Takashi MATSUURA、Hiroaki UETAKE、Junichi MUROTA、Kouichi FUKUDA、Tadahiro OHMI、Nobuo MIKOSHIBA、Tadashi KAWASHIMA、Yoshihiro YAMASHITA (1.Department of Electronics, Faculty of Engineering, Tohoku University、2.Research Institute of Electrical Communication, Tohoku University、3.Takatsuka Units, Seiko Instruments Inc.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-2] Microwave Plasma Etching of Silicon Dioxide for Half-Micron ULSIs

Kazuo NOJIRI、Eri IGUCHI、Koichiro KAWAMURA、Kazuya KADOTA (1.Semiconductor Design & Development Center, Hitachi Ltd.、2.Hitachi Microcomputer Engineering, Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-3] Effect of Temperature on Dry Etching of Copper Films in Chlorinated Gases

Kazuhide Ohno、Masaaki Sato、Yoshinobu Arita (1.NTT LSI Laboratories)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード