[B-4-2] 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs

Hisashi FUKUDA, Akira UCHIYAMA, Takahisa HAYASHI, Toshiyuki IWABUCHI, Seigo OHNO (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[C-1-1] Orientational Stability vs. Faceting of Silicon Substrates

Ellen D. Williams, R. J. Phaneuf, T. R. Ohno (1.Department of Physics University of Maryland)

1989 Conference on Solid State Devices and Materials |PDF Download

[C-1-2] Improvement of SiO2/Si Interface Flatness by Post Oxidation Anneal

Atsushi Ogura, Naoaki Aizaki (1.Fundamental Research Laboratories, NEC Corporation)

1989 Conference on Solid State Devices and Materials |PDF Download

[C-1-3] SiO2/Si Interfaces Studied by STM

Masaaki Niwa, Hiroshi Iwasaki (1.Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[C-2-1] Development of Scanning μ-RHEED Microscopy for Imaging Poly-Crystal Grain Structure in LSI

Kazuo TSUBOUCHI, Kazuya MASU, Msanori TANAKA, Yohei HIURA, Tadahiro OHMI, Nobuo MIKOSHIBA, Shigeki HAYASHI, Takao MARUI, Akira TERAMOTO, Tetsuo KAJIKAWA, Hiroyoshi SOEJIMA (1.Research Institute of Electrical Communication, Tohoku University, 2.Department of Electronics, Faculty of Engineering, Tohoku University, 3.Shimadzu Corporation)

1989 Conference on Solid State Devices and Materials |PDF Download

[C-2-2] Local Stress Analysis Methods Using a Micro Focused X-ray Spectrometer and Computer Simulations for ULSIs

Naoki Yamamoto, Shinji Sakata (1.Central Research Laboratory, Hitachi, Ltd., 2.Mechanical Engineering Laboratory, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[C-2-3] Measurement of a Minority-Carrier Lifetime and a Surface Recombination Velocity by a 2-Mercury Probe Method

Eiichi Suzuki, Yutaka Hayashi (1.Electrotechnical Laboratory)

1989 Conference on Solid State Devices and Materials |PDF Download

[C-3-1] In0.53Ga0.47As MISFETs Having an Ultra-thin MBE Si Interface Control Layer and Photo-CVD SiO2 Insulator

M. Akazawa, H. Hasegawa, E. Ohue (1.Department of Electrical Engineering, Faculty of Engineering Hokkaido University)

1989 Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Improvement of Fluoride/GaAs Interfaces by Rapid Thermal Annealing and Its Application to MISFET Fabrications

Kwang Ho KIM, Hiroshi ISHIWARA, Seijiro FURUKAWA (1.Research Laboratory of Precision Mechinery and Electronics, 2.Graduate School of Science and Engineering, Tokyo Institute of Technolgy)

1989 Conference on Solid State Devices and Materials |PDF Download

[C-3-3] A Novel Selective MBE-Growth of GaAs on CaF2 by Electron Beam Exposure

Kazuo TSUTSUI, Sejiro FURUKAWA (1.Dept. of Applied Electronics, Tokyo Institute of Technology)

1989 Conference on Solid State Devices and Materials |PDF Download