D Conversion Applications

Michael E. KIM, A. K. OKI, D. K. UMEMOTO, L. T. TRAN, L. M. PAWLOWICZ, K. W. KOBAYASHI, P. C. GROSSMAN, D. C. STREIT, K. S. STOLT, M. E. HAFIZI, J. B. CAMOU, R. ESFANDIARI, B. L. NELSON, B. K. OYAMA, B. R. ALLEN (1.TRW Inc., Electronics and Technology Division)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-2-2] Self-Aligned AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Amplification

Mau-Chung F. CHANG, Nan-Lei WANG, Peter M. ASBECK, Wu-Jing HO, Neng-Haung SHENG, J. Aiden HIGGINS, Gerald J. SULLIVAN (1.Rockwell International Science Center)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-2-3] Elimination of Emitter-Mesa Etching and Complete Planarization of Heterojunction Bipolar Transistors via Doping Selective Base Contact and Selective Hole Epitaxy

T. Y. Kuo, K. W. Goossen, J. E. Cunningham, C. G. Fonstad, F. Ren, W. Jan (1.AT&T Bell Laboratories, 2.Massachusetts Institute of Technology)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-2-4] MBE-Grown GaAs Voltage-Controlled Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor

K. F. YARN, C. Y. CHANG, Y. H. WANG, R. L. WANG (1.Department of Electrical Engineering, National Cheng Kung University, 2.Institute of Electronics, National Chiao Tung University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-2-5] Comprehensive Analysis of Bifunctional 2DEG-HBTs

T. USAGAWA, P. D. RABINZOHN, H. MIZUTA, K. HIRUMA, M. KAWATA, K. YAMAGUCHI (1.Central Research Laboratory, Hitachi Ltd., 2.Philips Research Organization)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-2-6] A Monte Carlo Analysis of AlGaAs/GaAs Ballistic Collection Transistors (BCT's) under High Current Injection

Hiroki NAKAJIMA, Tadao ISHIBASHI, Masaaki TOMIZAWA (1.NTT LSI Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-2-7] Fabrication and Characterization of InAs Channel Heterojunction Field-Effect Transistors

Kanji Yoh, Toshiaki Moriuchi, Masataka Inoue (1.Department of Electrical Engineering, Osaka Institute of Technology)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-3-1] A Triple-Level Interconnection Technology for High Speed 16 Kb GaAs SRAM

M. Noda, S. Matsue, M. Sakai, K. Sumitani, H. Nakano, T. Oku, H. Makino, K. Nishitani, M. Otsubo (1.Optoelectronic and Microwave Devices R & D Lab., 2.LSI R & D Lab. Mitsubishi Electric Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] Extreme Low Power 1:4 Demultiplexer Using Double Delta Doped Quantum Well GaAs/AlGaAs Transistors

M. Berroth, U. Nowotny, V. Hurm, M. Lang, K. Kohler, U. Kaufel, A. Hulsmann, J. Schneider, T. Jakobus, Ch. Hoffmann, K. Bachem (1.Fraunhofer Institut fur Angewandte Festkorperphysik)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Application of Hydrogenation to Improve GaAs/Si MESFETs and IC Performance by PECVD SiN

Mingxiang Li, Qingyi Tong, Gang Zou, J. Deboeck, M. Von Rossum, G.J. Declerck (1.Microelectronics Center, Southeast University, 2.IMEC)

1990 International Conference on Solid State Devices and Materials |PDF Download