[A-2-3] Investigation of the Atomic Structure of the SiO2/Si(111) Interface by MEIS (Medium-Energy Ion Scattering)

T. NISHIOKA, Y. SHINODA, C. HEIMLICH, Y. KOBAYASHI, H. HIBINO, K. SUGII (1.NTT Basic Research Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] Modified Impact-Ionization Recombination Model under Dynamic Stress of Thin Oxide

Seiji Yamada, Kiyomi Naruke, Masashi Wada (1.Semiconductor Device Engineering Laboratory TOSHIBA Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Strain Evaluation at the Si/SiO2 Interface Using ER Method

Pornchai YONGWATTANASOONTORN, Hitoshi KUBO, Masato MORIFUJI, Kenji TANIGUCHI, Chihiro HAMAGUCHI Keitaro IMAI (1.Department of Electronic Engineering, Osaka University, 2.ULSI Research center, Toshiba Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Low-Temperature Silicon Epitaxy without Substrate Heating and Selectivity Inversion in Ultraclean ECR Plasma Enhanced CVD

Takashi MATSUURA, Junichi MUROTA, Tadahiro OHMI, Shoichi ONO (1.Department of Electronics, Faculty of Engineering, Tohoku University, 2.Research Institute of Electrical Communication, Tohoku University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Ion Flux Effect in Low Temperature Silicon Epitaxy by Low-Energy Ion Bombardment

Tohru YOSHIE, Masaki HIRAYAMA, Tadahiro OHMI (1.Department of Electronics, Tohoku University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] Amorphization Processes in Ion Implanted Si: Temperature Dependence

T. Motooka, F. Kobayashi, P. Fons, T. Tokuyama T. Suzuki, N. Natsuaki (1.University of Tsukuba, 2.Device Development Center, Hitachi, Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] Rapid Vapor-Phase Direct Doping; Ultra-Shallow Junction Formation Method for High-Speed Bipolar and Highly-Integrated DRAM LSIs

Yukihiro Kiyota, Takahiro Onai, Tohru Nakamura, Taroh Inada, Atsushi Kuranouchi, Yasuaki Hirano (1.Central Research Laboratory, Hitachi, Ltd, 2.College of Engineering, Hosei University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[B-1-5] An Analysis of p+-n Junction Capacitance with Three-Dimensional Impurity Profiling Method Using Scanning Tunneling Microscopy

M. Tanimoto, T. Douseki, T. Takigami (1.NTT LSI Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] Novel Applications of Focused Ion Beam Technology

Masanori KOMURO (1.Electrotechnical Laboratory)

1991 International Conference on Solid State Devices and Materials |PDF Download

[B-2-2] Proximity Gettering of Micro-Defects by High Energy Ion Implantation

T. Kuroi, S. Komori, K. Fukumoto, Y. Mashiko, K. Tsukamoto, Y. Akasaka (1.LSI Laboratory, Mitsubishi Electric Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

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