[S-C-2] Atomic Scale Characterisation and Control of Heterojunctions and Schottky Barriers in Compound Semiconductors

R H Williams (1.Department of Physics and Astronomy University of Wales College of Cardiff)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-C-3] Chemical Passivation of Compound Semiconductor Surfaces: Applications, Mechanisms and In Situ Probes

Claude J. Sandroff (1.Bellcore)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-C-4] In-Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors

Toshiya Saitoh、Hirotake Iwadate、Hideki Hasegawa (1.Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-C-5] Surfactant Epitaxy of Si on Si (111) Activated by Sn

Shun-ichi IWANARI、Kunio TAKAYANAGI (1.Tokyo Institute of Technology, Materials Science and Engineering)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-C-6] Epitaxy and Pattern Formation of III- V Semiconductors as a Through UHV Processing towards 2- and 3-Dimensional Nanostructures

Y. KATAYAMA、K. AKITA、Y. OHKI、Y. SUGIMOTO、Y. HIRATANI、H. KAWANISHI (1.Optoelectronics Technology Research Laboratory (OTL))

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-C-7] Direct Pattern Delineation of Fluoride Films with Multilayer-Monochromatized Synchrotron Radiation with Real-Time Monitoring by SR-Excited Auger Electrons

Masaharu OSHIMA、Satoshi MAEYAMA、Hisataka TAKENAKA、Yoshikazu ISHII、Hirohiko SUGAHARA (1.NTT Applied Electronics Laboratories、2.NTT LSI Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-C-8] In-situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy

Akihiro HASHIMOTO、Naoharu SUGIYAMA、Masao TAMURA (1.Optoelectronics Technology Research Laboratory、2.Research and Development Center, Toshiba Corporation)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC1-1] Surface Passivation Studies on GaAs with Octadecyl Thiol

O. S. Nakagawa、S. Ashok、C. Wade Sheen、Jan Martensson、David L. Allara (1.Center for Electronic Materials and Processing、2.Department of Material Science and Engineering The Pennsylvania State University)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC1-2] A New Forward-Bias Capacitance Spectroscopy for Characterization of Interface States in GaAs Schottky Gate

Chung Gyune Choi、Sheng San Li、Kye Hwan Oh (1.Semiconductor R&D Center, Hyundai Electron. Ind. Co.、2.Dept. of Electrical Engineering, University of Florida)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC1-3] Surface Recombination Reduction by (NH4)2Sx-Passivation in MOCVD Regrowth for AlGaAs/GaAs BH Lasers

T. Tamanuki、F. Koyama、K. Iga (1.Tokyo Institute of Technology Precision and Intelligence Lab.)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード