[S-II-10] Low Defect Density Low Stress GaAs Grown on Undercut GaAs on Si

Naoki WADA、Shinichi YOSHIMI、Masamichi SHIGEKANE、Shiro SAKAI、Yoshihiro SHINTANI、Masuo FUKUI (1.Department of Electrical and Electronic Engineering, Tokushima University、2.Department of Electronics, Technical College, Tokushima University)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-11] Charge Balanced Heteroepitaxial Growth of GaAs on Si

Kenzo Maehashi、Shigehiko Hasegawa、Hisao Nakashima (1.The Institute of Scientific and Industrial Research, Osaka University)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-12] InP-Based Optical Devices on Si Substrates

Mitsuru SUGO、Hidefumi MORI、Yoshio ITOH、Yoshihisa SAKAI (1.NTT Opto-electronics Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-13] A Study of GaAs Digital ICs on Si Substrates

S. Onozawa、T. Kimura、K. Inokuchi、Y. Sano、M. Akiyama (1.Research and Development Group, Oki Electric Industry Co., Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-14] InGaP/InGaAs/GaAs Pseudomorphic HEMT DCFL Circuits on Si Substrates

Haruyoshi SUEHIRO、Shigeru KURODA、Tadayuki MIYATA、Tatsuya OHORI、Masahiko TAKIKAWA (1.Fujitsu Laboratories Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-15] Monolithic Integration of Strain-Relieved AlGaAs/InGaAs Laser and GaAs MESFET Grown on Si Using Selective Regrowth by MOCVD

Takashi EGAWA、Kei YAMAMOTO、Takashi JIMBO、Masayoshi UMENO (1.Department of Electrical and Computer Engineering, Nagoya Institute of Technology)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-16] SiGe/Si Heterostructures

Toru Tatsumi、Ken-ichi Aketagawa、Masayuki Hiroi、Junro Sakai (1.Microelectronics Labs. NEC Corporation、2.ANELVA Corporation)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-17] Solid Phase Recrystallization of Amorphous and MBE-Grown Ge Films on Si Substrates by Annealing under Ultrahigh Pressure

Hiroshi Ishiwara、Takayoshi Satoh、Pak Hong Yee、Akira Sawaoka (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology、2.NTT Laboratory、3.Laboratory for Engineering Materials, Tokyo Institute of Technology)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-18] Excitonic Band Edge Luminescence in Strained Si1-xGex/Si Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy

S. Fukatsu、N. Usami、H. Yoshida、A. Fujiwara、Y. Takahashi、Y. Shiraki、R. Ito (1.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo、2.Dept. of Applied Physics, Faculty of Engineering, The University of Tokyo)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-19] "Solid Source" Molecular Beam Epitaxial Growth of Highly Luminescent Si1-xGex/Si Quantum Well Structures

N. Usami、S. Fukatsu、Y. Shiraki (1.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード