[PB-3-15] A Simple Method for Analyzing Bulk Versus Surface Punchthrough Current

E. D. Nowak, C. Hu (1.VLSI Technology Inc., 2.Department of Electrical Engineering and Computer Science, University of California)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-3-16] Low On-Resistance High-Voltage Power DMOSFET with an Interdigitated Form

Naoto Fujishima, Akio Kitamura, Gen Tada (1.Fuji Electric Corporate Research and Development, Ltd., 2.Fuji Electric Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-5-1] Photoluminescence Processes in Si1-xGex/Si Heterostructures

M. L. W. Thewalt (1.Department of Physics Simon Fraser University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-5-2] Luminescence in Strained Si1-xGex/Si Quantum Wells

S. Fukatsu, N. Usami, Y. Shiraki (1.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-5-3] Photoluminescence of SixGe1-x/SiyGe1-y Multiple Quantum Wells Grown on Ge(100) Substrates

Koichi Terashima, Douglas Tweet, Keiko Miyanaga, Toru Tatsumi, Michio Tajima (1.Microelectronics Res. Labs., NEC Corporation, 2.Institute of Space and Astronautical Science)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-5-4] Bang-Edge Photoluminescence of SiGe/strained-Si/SiGe Type-II Quantum Wells on Si(100)

D. K. Nayak, N. Usami, H. Sunamura, S. Fukatsu, Y. Shiraki (1.Research Center for Advanced Science and Technology (RCAST) The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-5-5] Observation of Ge-Vibration Modes in the Luminescence of Si-Rich Si1-xGex Layers Grown by Molecular Beam Epitaxy

Joachim Hartung, V. Higgs, G. Davies, E. C. Lightowlers, Dirk Gravesteijn (1.Physics Department, King's College London, 2.Philips Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-5-6] Optical Properties of Dry Etched Si/Si1-xGex Heterostructures

Y. S. Tang, C. D. W. Wilkinson, D. W. Smith, T. E. Whall, E. H. C. Parker (1.Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, 2.Department of Physics, University of Warwick)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-1] Single Step Gap Filling Technology for Subhalf Micron Metal Spacings on Plasma Enhanced TEOS/O2 Chemical Vapor Deposition System

Katsuyuki MUSAKA, Shinsuke MIZUNO, Kiyoaki HARA (1.Applied Materials Japan Inc. Technology Center)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-2] A New Silicon Source Material for SiO2 CVD -Hydrogen Free Organic Silicon-

Osamu SUGIURA, Hitoshi TANIGUCHI, Werner GASSER, Masakiyo MATSUMURA (1.Dept. of Physical Electronics, Tokyo Institute of Technology)

1993 International Conference on Solid State Devices and Materials |PDF Download

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