[D-2-2] Formation of Strain-Free GaAs-On-Si Structures by Annealing under Ultrahigh Pressure

Hiroshi Ishiwara, Tomohisa Hoshino, Masakazu Usui, Hisashi Katahama (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology, 2.Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] Threading Dislocations in GaAs on Pre-Patterned Si and in Post-Patterned GaAs on Si

M. Tamura, T. Saitoh, J. Palmer, T. Yodo, J. Kasai, A. Nishida (1.Optoelectronics Technology Research Laboratory, 2.Central Research Laboratory, Hitachi, Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[D-2-4] Realization of Tensile Strain on GaAs Substrates with Non-Pseudomorphic Grid Layer

Yuen-Chuen CHAN, Tetsurou MORIMOTO, Kunio TADA (1.Department of Electronic Engineering University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

[D-2-5] Optical Anisotropy of Pseudomorphic (In, Ga)As Multiple Quantum Wells Oriented in the [110] Crystallographic Direction

D. Sun, E. Towe (1.Department of Electrical Engineering University of Virginia)

1993 International Conference on Solid State Devices and Materials |PDF Download

[D-2-6] Efficient Er Luminescence Centers Formed in GaAs by MOCVD with Oxygen Codoping

Kenichiro Takahei, Akihito Taguchi (1.NTT Basic Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-1] Silicon-on-Insulator for High Speed ULSI

Chenming HU (1.Department of Electrical Engineering and Computer Science University of California)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-2] Selective Etching of Native Oxide Using Vapor HF Processing

J. M. de Larios, J. O. Borland, S. Hatada, I. Tamatani (1.Genus, Inc., Thin Film Division, 2.Sumitomo Metal Industries, Ltd., Semiconductor Equipment Div.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-3] Hot-Carrier Related Phenomenon in MOSFETs with Furnace N2O-Nitrided Gate Oxides

G. W. Yoon, J. Ahn, G. Q. Lo, D. L. Kwong (1.Microelectronics Research Center The University of Texas at Austin)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-4] Correlation between Chemical Structure and Electrical Properties of NH3-Nitrided N2O Oxides

M. Bhat, G. W. Yoon, A. B. Joshi, J. Kim, J. Ahn, D. L. Kwong, M. Arendt, J. M. White (1.Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas, 2.Department of Chemistry The University of Texas)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-5] Influence of Si-SiO2 Interface Microroughness and Dopant Concentration on Electron Channel Mobility in MOSFET

K. Ohmi, K. Nakamura, T. Futatsuki, K. Makihara, T. Ohmi (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University, 2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF Download

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