[S-VI-9] Blue/Blue-Green Electroluminescence from ZnSe-Based Wide-Gap II-VI Semiconductor Homo- and Double Hetero-Junction Diodes Grown by Photo-Assisted Metalorganic Vapor-Phase Epitaxy

Shizuo FUJITA、Takeharu ASANO、Kensaku MAEHARA、Shigeo FUJITA (1.Department of Electrical Engineering, Kyoto University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-10] Comparison of Electrical and Optical Properties of n-i-i and p-n ZnSSe Heterostructure Diodes

Yoshihisa FUJII、Ikuo SUEMUNE、Ken-ichi OKAMOTO、Masahiro FUJIMOTO、Kazuhiro OKAMURA (1.Faculty of Engineering, Hiroshima University、2.Research Institute for Electronic Science, Hokkaido University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-11] Strain-Induced Electronic States of a CdZnS/ZnS Quantum Well and Its Application to UV Laser Diode

Tsunemasa Taguchi、Chikara Onodera (1.Department of Electrical Engineering, Faculty of Engineering, Osaka University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-12] Nitrogen-Doped ZnSe Grown on Vicinal (100)-Oriented and (211)-Oriented GaAs Substrates by Molecular Beam Epitaxy

Z. Zhu、T. Ebisutani、K. Takebayashi、K. Tanaka、T. Yao (1.Department of Electrical Engineering, Hiroshima University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-13] Compensation Mechanism of Free Hole Carriers in N-Doped ZnSe

Masakatsu Suzuki、Takeshi Uenoyama、Akira Yanase (1.Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.、2.College of Integrated Arts and Science, University of Osaka Prefecture)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-III-1] In-Situ Transmission Electron Microscopy Study of Roughness during Silicon Oxidation and Silicidation

J. M. GIBSON、X. TONG、R. D. TWESTEN、F. M. ROSS (1.University of Illinois, Department of Physics、2.Lawrence Berkeley Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-III-2] Second-Harmonic Generation: A New Technique for Probing Chemical Bonding on Vicinal Si(III) Surfaces

C. H. Bjorkman、T. Yasuda、G. Lucovsky、U. Emmerichs、C. Meyer、K. Leo、H. Kurz (1.Departments of Physics, Materials Science & Engineering, and Electrical & Computer Engineering, North Carolina State University、2.Institute of Semiconductor Electronics II, Rheinisch-Westfalische Technische Hochschule)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-III-3] Layer-by-Layer Etching of Si by Self-Limited Adsorption of Chlorine with Alternated Irradiation of Low Energy Ar+ Ions

Takashi MATSUURA、Junichi MUROTA、Yasuji SAWADA、Tadahiro OHMI (1.Laboratory for Microelectronics, Research Institute of Electrical Communication, Department of Electronic Engineering, Faculty of Engineering, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-III-4] Influence of the Structural Transition Layer on the Reliability of Thin Gate Oxides

Eiji HASEGAWA、Koichi AKIMOTO、Masaru TSUKIJI Taishi KUBOTA、Akihiko ISHITANI (1.ULSI Device Development Laboratories, NEC Corporation、2.Microelectronics Research Laboratories, NEC Corporation)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-III-5] Local Ordering and Layer by Layer Growth of the Initial Thermal Oxide of Si(001)

Masaharu UDAGAWA、Masaaki NIWA、Isao SUMITA (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.、2.Matsushita Research Institute Tokyo, Inc.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード