SrTiO3(Nb) Three Terminal Device

Fumihiko TODA、Mitsuhiko OGIHARA、Zhongmin WEN、Ryodo KAWASAKI、Tomoyuki YAMADA、Hitoshi ABE (1.Research Laboratory, Oki Electric Industry Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-1] Degradation and Breakdown of Silicon Dioxide Films on Silicon

D. J. DI MARIA (1.IBM Thomas J. Watson Research Center)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-2] Reliability of nm-Oxide Formed on Si Wafers Containing Crystal Defects

Jiro Yugami、Takashi Takahama、Makoto Ohkura (1.Central Research Laboratory, Hitachi, Ltd.、2.Hitachi VLSI Engineering, Co.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-3] Plasma Damage of Gate Oxide through the Interlayer Dielectric

Shuji Hirao、Tatsuo Sugiyama、Takehito Yoshida、Kousaku Yano、Noboru Nomura (1.Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-4] Investigations on Hole Trapping and Detrapping Phenomena in Thin Oxide Films

Quazi Deen Mohd Khosru、Naoki Yasuda、Kenji Taniguchi、Chihiro Hamaguchi (1.Department of Electronic Engineering, Osaka University、2.Toshiba Corporation, ULSI Research Center)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-5] Effect of the Silicidation Reaction Condition on the Gate Oxide Integrity in the Ti-Polycide Gate

N. I. Lee、Y. W. Kim、J. W. Ko、I. K. Kim、S. T. Ahn (1.Advanced Tech. Center, Samsung Electronics Co. Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-1] Temperature Effects of the Inversion Layer Electron and Hole Mobility of MOSFETs from 85K to 500K

J. S. Duster、Z. H. Liu、P. K. Ko、C. Hu (1.Dept. of EECS, University of California)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-2] Degradation Phenomenon under Low Drain Voltage Stress in pMOSFETs

T. Morii、R. Murai、Y. Uraoka、K. Tsuji (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-3] Characterization of Hot Electron Induced Interface States in LATID MOS Devices Using an Improved Charge Pumping Method

Steve S. Chung、J.-J. Yang、C.-H. Tang、P.-C. Chou (1.Department of Electronic Engineering, National Chiao Tung University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-4] Identification of Generation-Recombination Centers and Traps among Interface States by Cryogenic Charge Pumping Technique

Jen-Tai Hsu、C. R. Viswanathan (1.Department of Electrical Engineering, University of California)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

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