[LC-5] Fabrication of Ta2O5-Si System with Low Density of Interface States and Deep Traps by Plasma Enhanced Liquid Source CVD

P. A. Murawala、M. Sawai、T. Tatsuta、O. Tsuji Sz. Fujita、Sg. Fujita (1.Research & Development Center, Samco International Incorporated、2.Department of Electrical Engineering, Kyoto University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LC-6] Assessment of Hot Carrier Effects on the High Frequency Characteristics of NMOS Transistors

J. H. Yoo、K. D. Yoo、J. H. Jin、G. H. Lim、Y. S. Choi、D. G. Kim、S. K. Lim、K. H. Choi (1.Process Development Dept., Micro Division, Samsung Electronics Co.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LC-7] Electrical Properties of High Mobility Poly-Si TFTs at Low Temperatures

Tadashi Serikawa、Seiiti Shirai、Sadao Takaoka、Kazuo Murase、Shuichi Ishida (1.NTT Interdisciplinary Research Labs、2.Faculty of Science, Osaka University、3.Science University of Tokyo, Yamaguchi College)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LC-8] A-Si:H TFTs Fabricated with Gated rf-discharge Plasma-CVD Technology

Kazushige Takechi、Hiroyuki Uchida、Hiroshi Hayama Akira Kodama、Yoshimi Watabe (1.Functional Devices Research Laboratories, NEC Corporation、2.3rd Thin Film Engineering Division, ANELVA Corporation)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LC-9] Microcavity Surface-Emitting Laser with Record Low Threshold Current of 190 μA

T. Kawakami、T. Numai、T. Yoshikawa、M. Sugimoto、Y. Sugimoto、H. Yokoyama、K. Kasahara、K. Asakawa (1.Opto-Electronics Research Laboratories, NEC Corporation)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LC-10] Low-Threshold Operation of Short-Wavelength Tensile-Strained QW AlGaInP Laser Diodes in 630-nm Band

T. Tanaka、H. Yanagisawa、S. Kawanaka、M. Takimoto、S. Minagawa (1.Central Research Laboratory, Hitachi Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LC-11] Increase of Acceptor Concentration in Nitrogen Doped ZnSe Film Grown on a Tilted GaAs Substrate

Tetsuichiro Ohno、Yoshihiro Kawaguchi、Takashi Matsuoka、Akira Ohki (1.NTT Opto-electronics Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LC-12] Spectroscopy of Ballistic Hot Electrons Propagating 1.8μm...18μm through a 2D Electron Gas

G. Fasol、J. Motohisa、Y. Nagamune、H. Sakaki (1.ERATO Quantum Wave Project and Research Center for Advanced Science and Technology)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LC-13] AlGaAs/InGaAs/GaAs Single Electron Transistors Fabricated by Ga Focused Ion Beam Implantation

Toshimasa Fujisawa、Yoshiro Hirayama、Seigo Tarucha (1.NTT Basic Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LC-14] Observation of Large Quantum Size Effect in GaInAs/GaInAsP Strained Quantum-Box Structure

Hideki HIRAYAMA、Kazuhisa MATSUNAGA、Masahiro ASADA Tsukasa KAKINUMA、Machiya KUMAZAWA (1.Department of Physical Electronics Department of Electrical and Electronic Engineering Tokyo Institute of Technology)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

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