[PC-1-3] The Initial Growth Mechanism of LPCVD-Si3N4 on Si and SiO2

N. Inoue、M. Itoh、H. Tamura、M. Yoshimaru、M. Ino (1.VLSI Research and Development Center OKI Electric Industry Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-4] Highly Reliable Oxynitride Gate Dielectrics for Dual Gate CMOS Applications

A. B. Joshi、J. Ahn、G. W. Yoon、J. Kim、M. Bhat、D. L. Kwong (1.Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin、2.Digital Communications Division, Rockwell International Corporation)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-5] A New Portrayal of Oxidation of Undoped Polycrystalline Silicon Film for Short Duration

P. W. Wang、H. P. Su、M. S. Feng、H. C. Cheng (1.Department of Electronics Engineering and Institute of Electronics, National Nano Device Laboratory、2.Institute of Materials Science and Engineering, National Chiao Tung University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-6] Three Dimensional Improvement of Field Oxidation by Using High Pressure Oxidation for the Gigabit Density Field Isolation

Simon DELEONIBUS、Sang S. KIM (1.LETI (CEA-Technologies Avancees)- Dept de Microelectronique、2.GASONICS/IPC-HiPOx Products-)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-7] A Novel LOCOS-Type Isolation Technology Free of the Field Oxide Thinning Effect

T. Park、D. H. Ahn、Y. T. Seo、J. H. Ko、S. T. Ahn (1.Advanced Technology Center, Samsung Electronics Co. LTD.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-8] Single Crystalline Si MOSFETs Using High-Quality Gate SiO2 Deposited at 300℃ by Remote Plasma Technique

Takashi FUYUKI、Tohru OKA、Hiroyuki MATSUNAMI (1.Dept. Elect. Eng., Kyoto Univ.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-9] HF/CH30H(Alcohol) Vapor Cleaning <HAVC> and Its Application to Polycrystalline Silicon/Silicon Contact Formation

A. Izumi、T. Matsuka、K. Miya、T. Takeuchi、A. Yamano J. Tsuchimoto、H. Itoh、H. Abe (1.Development Department 2, Dainippon Screen Mfg. Co. Ltd.、2.LSI Laboratory, Mitsubishi Electric Corporation)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-10] Wettability of Silicon Oxide by Poly-Crystalline Silicon

Mitsutoshi MIYASAKA、Wataru ITOH、Tadakazu KOMATSU、Ichio YUDASAKA、Hiroyuki OHSHIMA (1.SEIKO EPSON CORPORATION TFT/MIM Research Laboratory Material Analysis and Computing Center Production Engineering Department)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-11] Selective Tungsten CVD with High Deposition Rate for ULSI Application

H. Suzuki、Y. Maeda、K. Morita、M. Morita、T. Ohmi (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University、2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-12] Improvement of the Interface between Selectively Deposited Al and Si by Annealing

Kouichi TANI、Satoshi NISHIKAWA (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

365件中(171 - 180)

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