[PB-3-5] Anomalous Resistance in 0.1μm-Region Ti-Silicided Poly Si Gate

Minoru Takahashi, Iwao Kunishima, Masao Iwase, Hiromi Niiyama Tomohisa Mizuno, Naoki Yasuda, Makoto Yoshimi (1.ULSI Research Labs, R&D Center, Toshiba Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-3-6] Bipolar Transistor with a Buried Layer Formed by High Energy Ion Implantation for Sub-Half Micron BiCMOS LSI

T. Kuroi, Y. Kawasaki, Y. Ishigaki, Y. Kinoshita, M. Inuishi, N. Tsubouchi (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-3-7] Modeling of the Hole Current Caused by Fowler-Nordheim Tunneling through Thin Oxides

Gertjan Hemink, Tetsuo Endoh, Riichiro Shirota (1.Toshiba Research and Development Center ULSI Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-3-8] A Concise Analytical Model for Deep Submicron NMOS Devices Considering Energy Transport

S. Y. Ma, J. B. Kuo (1.Rm. 526, Dept. of Electrical Eng., National Taiwan University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-3-9] I-V Characteristics of SOI MOSFETs in Ballistic Mode

Kenji Natori (1.Institute of Applied Physics, University of Tsukuba)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-3-10] A Study of Short Channel Behavior of Accumulation Type SOI MOSFETs

H.-O. Joachim, Y. Yamaguchi, Y. Inoue, T. Nishimura, N. Tsubouchi (1.Mitsubishi Electric Corporation, ULSI Laboratory)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-3-11] Mobility Degradation Induced by Substrate-Hot-Electron Generated Interface Traps at Different Stress Voltages and Temperatures

C. C.-H. Hsu, C.-J. Lin (1.Department of Electrical Engineering National Tsing-Hua University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-3-12] Accurate Modeling of the Energy-Dependent Hot Electron Effects in Submicron MOSFET's

Steve S. Chung, G.-H. Lee (1.Department of Electronic Engineering and Institute of Electronics National Chiao Tung University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-3-13] A Self-Consistent Effective-Channel-Length/External-Resistance Extraction Method for Small-Geometry MOSFET's

Takaaki Yagi, Mitsuchika Saitoh, Nobuo Mikoshiba (1.Hewlett-Packard Laboratories Japan)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-3-14] Latch-up Suppressed IGBT by the Deep P+ Ion Implantation under the n+ Source

Byeong-Hoon Lee, Chong-Man Yun, Han-Soo Kim, Yearn-Ik Choi, Min-Koo Han (1.Dept. of Electrical Eng. Seoul Nat'l Univ., 2.Dept. of Electronics Eng. Ajou Univ.)

1993 International Conference on Solid State Devices and Materials |PDF Download

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