[S-I-1-1] Growth Dynamics of III-V Semiconductor Films

Bruce A Joyce (1.Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-1-2] Two Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source

Akihiko KOKUCHI、Hiroyuki HOSHI、Katsumi KISHINO (1.Dept. of Electrical & Electronics Engineering, Sophia University)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-1-3] Plasma-Assisted MOCVD Growth of GaAs/GaN/GaAs Thin-Layer Structures by N-As Replacement Using N-Radicals

Michio SATO (1.NTT Basic Research Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-1-4] Anomalous Step Bunching of a Strained InGaAs Epitaxial Layer Grown on an Off-Angled GaAs Substrate

K. Fukagai、S. Ishikawa (1.Opto-Electronics Research Laboratories, NEC Corporation)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-1-5] Surface Second-Harmonic Generation (SHG) Study of Epitaxial Growth of GaAs

Chiakshi Yamada、Takahiro Kimura (1.Optoelectronics Technology Research Laboratory)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-2-1] New Challenges for Delta-Like Confinement of Impurities in GaAs

Klaus H. Ploog、Lutz Daweritz (1.Paul-Drude-Institut fur Festkorperelektronik)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-2-2] Control of As Precipitation in Low Temperature GaAs by Electronic and Isoelectronic Delta Doping

T. M. Cheng、C. Y. Chang、J. H. Huang (1.Institute of Electronics, National Chiao-Tung University)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-2-3] Stress Relaxation of GaAs on Si by Laser Pulse Irradiation

Hideo UCHIDA、Tetsuo SOGA、Hironobu NISHIKAWA、Takashi JIMBO、Masayoshi UMENO (1.Department of Electrical and Computer Engineering, Instrument and Analysis Center, Department of Physics, Research Center for Micro-Structure Devices, Nagoya Institute of Technology)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-2-4] Improvements in the Electrical Activity of Nitrogen Doped P-Type ZnSe Due to InGaP Buffer Layer

S. Saito、Y. Nishikawa、J. Rennie、M. Onomura、P. J. Parbrook、K. Nitta、M. Ishikawa、G. Hatakoshi (1.Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-2-5] Anti-Phase Direct Bonding of InP and GaAs and Its Application to Semiconductor Lasers

Y. Okuno、K. Uomi、M. Aoki、T. Taniwatari、M. Suzuki、M. Kondow (1.Central Research Laboratory, Hitachi, Ltd.、2.Fiberoptics Division, Hitachi, Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード