[C-8-2] Structural Inhomogeneity of Thermally Grown SiO2 Films Evaluated with Transmission Infrared Spectroscopy

Naoki Yasuda、Akira Toriumi (1.ULSI Research Laboratories, Toshiba Corporation)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-3] Relationship between Water Diffusivity of Dielectric Films and Accelerated Hot Carrier Degradation Caused by Water

Kenji Fukuda、Tadashi Nakano、Masaaki Fujishima、Naomi Mura Kyoji Tokunaga、Akihiko Tuzumitani Shuji Ichinose (1.LSI Research Center, Kawasaki Steel Corporation、2.Technology Development Center, Kawasaki Steel Corporation)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-4] Device-Quality SiO2/Si(100) and SiO2/Si(111) Interfaces Formed by Plasma-Assisted Oxidation and Deposition Processes

Tetsuji Yasuda、Y. Ma、G. Lucovsky (1.North Carolina State University, Department of Physics)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-5] Contribution of Si/SiO2 Interface Roughness in the Observation of Chemical Structure

Kenji ISHIKAWA、Hiroki OGAWA、Carlos INOMATA、Shuzo FUJIMURA (1.Process development division C850, Fujitsu Limited)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-9-1] Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel Oxide Films for Flash EEPROMs

T. Arakawa、T. Hayashi、M. Ohno、R. Matsumoto、A. Uchiyama、H. Fukuda (1.Semiconductor Technology Laboratory, LSI Process Technology Division Oki Electric Industry, Co., Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-9-2] Highly Reliable Silicon Nitride Films Made by Jet Vapor Deposition

X. W. Wang、T-p. Ma、G. J. Cui、T. Tamagawa、J. W. Golz、S. Karecki、B. L. Halpern、J. J. Schmitt (1.Yale University and Jet Process Corporation)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-9-3] Highly Reliable N2O-Oxynitrided Tunnel Oxides for Flash Memory

Masahiro Ushiyama、Masataka Kato、Tetsuo Adachi、Hitoshi Kume、Naoki Miyamoto、Toshiyuki Mine、Kiyoshi Ogata、Takashi Nishida、Yuzuru Ohji (1.Central Research Lab., Hitachi, Ltd.、2.Hitachi Device Engineering Co.、3.Production Engineering Research Laboratory, Hitachi, Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-9-4] Nitridation of SiO2 in NO Ambient for Ultrathin Oxynitride Dielectric Formation

M. Bhat、J. Kim、J. Yan、G. W. Yoon、L. K. Han、D. L. Kwong (1.Microelectronics Research Center, Department of Electrical and Computer Engineering BRC-MER 2.606A/79950, The University of Texas)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-9-5] High Quality ONO Gate Dielectrics Fabricated by In-Situ RTCVD

G. W. Yoon、J. Yan、L. K. Han、J. Kim、D. L. Kwong (1.Microelectronics Research Center, Department of Electrical and Computer Engineering BRC-MER 2.606A/79950, The university of Texas at Austin)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-1] Silicon Based HBT: Comparison of Concepts

E. Kasper (1.Institut fur Halbleitertechnik, Universitat Stuttgart)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

340件中(281 - 290)

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