[PB-1-11] Misorientation Effects on Al Composition in AlxGa1-xAs/GaAs Determined by High-Resolution XRD

Jong-Hyeob Baek、Meeyoung Yoon、Bun Lee、El-Hang Lee (1.Electronics and Telecommunications Research Institute, Research Department)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-1] A Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Wells

Satoshi Kodama、Satoshi Koyanagi、Hideki Hasegawa (1.Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-2] Combined Effects of High-Energy Si, Zn and Ga Ion Implantation and Annealing on the Reduction of Threading Dislocations in GaAs on Si

Masao Tamura、Tohru Saitoh (1.Optoelectronics Technology Research Laboratory)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-3] Characterization of P- and N-type Impurity Diffusions in GaAs from Doped Silica Films

Kazuya Okamoto、Atsushi Yamada、Yukihiro Shimogaki、Yoshiaki Nakano、Kunio Tada (1.Central Research Laboratory, Nikon Corporation、2.Faculty of Engineering, University of Tokyo)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-4] Nanofabrication of Materials with Scanning Tunneling Microscope

Seiichi Kondo、Seiji Heike、Mark Lutwyche、Yasuo Wada (1.Advanced Research Laboratory, Hitachi, Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-5] Surface Nitridation Process of (100) GaAs by NH3-Plasma Treatment with Planar Magnetic Field

Atsushi MASUDA、Yasuto YONEZAWA、Akiharu MORIMOTO、Tatsuo SHIMIZU (1.Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University、2.Industrial Research Institute of Ishikawa Prefecture)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-6] Surface Morphology of (NH4)2Sx-Treated GaAs(100) Investigated by Scanning Tunneling Microscope

JEONG SOOK HA、SUNG-BOCK KIM、SEONG-JU PARK、EL-HANG LEE (1.Electronics and Telecommunications Research Institute)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-7] Investigation of Surface Damage in GaInAs/GaInAsP/InP Wire Structures by Low-Energy-Reactive-Ion Assisted Radical Etching

Munehisa TAMURA、Yasuaki NAGASHIMA、Koji KUDO、Ki-Chul SHIN Shigeo TAMURA、Akinori UBUKATA、Shigehisa ARAI (1.Department of Physical Electronics, Tokyo Institute of Technology、2.Technology Devision, Tsukuba Laboratory, Nippon Sanso Co.)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-8] Optical Properties of Low Temperature Grown GaAs: The Influence of a Hydrogen Plasma Treatment

Jurgen Vetterhoffer、Jorg Weber、Klaus Kohler (1.Max-Planck-Institut fur Festkorperforschung)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-9] Photoellipsometry Study of δ-Doped GaAs

Yi-Ming XIONG、Cheong Chee WONG、Tadashi SAITOH (1.Division of Electronic and Information Engineering Tokyo University of Agriculture and Technology)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

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