[PA-3-1] Low Temperature and Facet-Free Epitaxial Silicon Growth by Contamination-Restrained Load-Lock LPCVD System

Masayuki NAKANO、Hiroshi KOTAKI、Seizou KAKIMOTO、Katsunori MITSUHASHI、Junkou TAKAGI (1.Central Research Laboratories, Sharp Corporation)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-3-2] LEED Analysis on Initial Stages of Ge Growth on Si(111)(1x1)-As and As-Desorbed Si(111)(1x1) Surfaces

Haruyuki YASUDA、Daisuke ABE、Shigehiko HASEGAWA、Kenzo MAEHASHI、Hisao NAKASHIMA (1.The Institute of Scientific and Industrial Research, Osaka University)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-3-3] Room Temperature Photoluminescence of Er-Doped Porous Silicon at 1.54μm

Tadamasa KIMURA、Akinori YOKOI、Hisakazu HORIGUCHI、Riyu IKEDA、Riichiro SAITO、Akinobu SATO (1.University of Electro-Communications、2.Fujikura Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-3-4] Study of Hole Thermal Emission from SiGe/Si Quantum Well by Deep Level Transient Spectroscopy and Admittance Spectroscopy

Dawei Gong、Jiayu Jiang、Qinhua Wang、Fang Lu、Henghui Sun、Yongliang Fan、Xiangjiu Zhang、Xun Wang (1.Surface Physics Laboratory, Fudan University、2.Physics Department, Fudan University)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-4-1] A New Model for the Long Term Charge Loss in EPROMs

Andreas Schenk、Martin Herrmann (1.Swiss Federal Institute of Technology Integrated Systems Laboratory, Reliability Laboratory)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-4-2] Dependence of Hot-Carrier Effect on Internal Stress in TiN/Poly-Si Gate MOSFET

Tatsuya Ishii、Masafumi Miyamoto、Koichi Seki (1.Central Research Laboratory, Hitachi Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-4-3] Electric Field Optimisation by Graded Low-Level Doping in Amorphous Silicon P-I-N Diodes

D. Fischer、A. V. Shah (1.Institut de Microtechnique, Universite de Neuchatel)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-4-4] Hot Carriers in Multi-Quantum-Well Heterostructures Ge/Ge1-xSix

V. I. Gavrilenko、I. N. Kozlov、O. A. Kuznetsov、M. D. Moldavskaya、V. V. Nikonorov (1.Institute for Physics of Microstructures of Russian Academy of Sciences)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-4-5] Impact of Source-Drain Extension Dose on Hot-Carrier Reliability in 0.1μm nMOSFETs

Yoshihiro Takao、Koh Watanabe、Seiichiro Kawamura (1.LSI Process Development Division, FUJITSU LIMITED)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-4-6] Mobility Improvement by Counter Doping and Its Reverse Short Channel Effect Associated Channel-Length-Dependent Degradation

E. P. Ver Ploeg、H. Noda、K. Umeda、R. Nagai、S. Kimura (1.Central Research Laboratory, Hitachi Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

340件中(161 - 170)

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