[C-7-4] The Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very High Density DRAM Applications

W. S. Lau、T. S. Tan、N. P. Sandler、B. S. Page (1.Department of Electrical Engineering, National University of Singapore、2.CVD Division, Lam Research Corporation)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-1] Study of an Epitaxial Ferroelectric / Semiconductor / Insulator Structure Using Perovskite Oxides for Application to the Field Effect Transistor

Yukio WATANABE (1.Mitsubisi Kasei Research Center)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-2] InAs Field-Effect Transistors with Platinum Schottky Gate

Kanji Yoh、Hayato Takeuchi Satoshi Izumiya、Masataka Inoue (1.Research Center for Interface Quntum Electronics, Hokkaido University、2.Department of Electrical Engineering, Osaka Institute of Technology)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-3] InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with a Ultra-High Carbon-Doped Base (p=1.5×1021cm-3)

Jun-ichi SHIRAKASHI、Toshiaki AZUMA、Fumihiko FUKUCHI、Makoto KONAGAI、Kiyoshi TAKAHASHI (1.Department of Electrical and Electronic Engineering, Department of Physical Electronics, Tokyo Institute of Technology)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-4] Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field Effect Transistor (FECFET)

Y. J. Lee、C. T. Kim、S. C. Hong、Y. S. Kwon、H. K. Yoon、K. H. Oh (1.Semiconductor R&D Lab. 1., Hyundai Electronics Industries Co., Ltd.、2.Goldstar Co., Ltd.、3.Dept. of EE, KAIST)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-5] A New Negative-Differential-Resistance Resonant-Tunneling Switch with Delta-Doped Quantum-Well Structure

Wen-Chau Liu、Der-Feng Guo、Lih-Wen Laih (1.Department of Electrical Engineering, National Cheng-Kung University、2.Department of Electronic Engineering, Private Kung-San Institute of Technology and Commerce)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-6] Elastic Scattering and Depletion Effects on Current-Voltage Characteristics of Gated Resonant Tunneling Diodes

Chomsik Lee (1.Hyundai Semiconductor R&D LAB 2)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-7] Electron Transport Modeling of Electron Waveguides in Nonlinear Transport Regime

H. Tsuchiya、T. Miyoshi (1.Department of Electrical and Electronics Engineering, Kobe University)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-8] Emitter Size Effects in the Coupled-Quantum-Well Base Resonant Tunneling Transistor

Hideaki Taniyama、Masaaki Tomizawa、Akira Yoshii (1.NTT LSI Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-1-9] The Study of the Distribution Function of Electrons by Ensemble Monte-Carlo Simulation of the Heterojunction Bipolar Transistor in Large Current Mode

Korshunov S. M.、Kulemin A. A.、Sorokoumov V. E. (1.Moscow Institute of Physics and Technology)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

340件中(261 - 270)

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