[S-VI-2-1] InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling

Atsushi Tackeuchi、Yoshiaki Nakata、Shunichi Muto、Tsuguo Inata、Tatsuya Usuki、Yoshihiro Sugiyama、Naoki Yokoyama、Osamu Wada (1.Fujitsu Laboratories Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-3-1] First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region

Yoshiaki HASEGAWA、Takashi EGAWA、Takashi JIMBO、Masayoshi UMENO (1.Department of Electrical and Computer Engineering, Nagoya Institute of Technology、2.Research Center for Micro-Structure Devices, Nagoya Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-1] Formation of (411)A Faceted GaAs Ridges Using Chemical Beam Epitaxy

JEONG-RAE RO、SEONG-JU PARK、SUNG-BOCK KIM、EL-HANG LEE (1.Research Department, Electronics and Telecommunications Research Institute)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-2] Surface Stoichiometry and Reconstruction of GaP(001)

Masahiro YOSHIKAWA、Atsushi NAKAMURA、Takashi NOMURA、Kenji ISHIKAWA (1.Research Institute of Electronics, Shizuoka University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-3] High Carbon Doping of GaAs and AlAs in Distributed Bragg Reflectors

Holger GRAHN、Holger NORENBERG、Angel MAZUELAS、Bernd JENICHEN、Rudolf HEY (1.Paul-Drude-Institut fur Festkorperelektronik)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-4] Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs

Kouji TOMINAGA、Makoto HOSODA、Toshihide WATANABE Kenzo FUJIWARA (1.ATR Optical and Radio Communications Reserach Laboratories、2.Department of Electrical Engineering, Kyushu Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-6] The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells

Wugen Pan、Hiroyuki Yaguchi、Kentaro Onabe、Ryoichi Ito Noritaka Usami、Yasuhiro Shiraki (1.Department of Applied Physics, The University of Tokyo、2.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-7] Robust Quantum Levels for Electrons and Holes in n-AlxGa1-xAs/u-GaAs/u-AlxGa1-xAs Modulation-Doped Corrugated Double Heterojunctions

Karel VACEK、Toshiyuki USAGAWA (1.Central Research Laboratory, Hitachi, Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-8] Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy

Toshiya SAITOH、Hayato TAKEUCHI、Jun KONDA、Kanji YOH (1.Research Center for Interface Quantum Electronics, Hokkaido University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-9] Enhancement of Average Velocity of Hot Carriers in Appropriate Heterostructures Due to Inversion of Distribution Functions

Vladimir A. KOZLOV、Alexander B. KOZYREV (1.Institute for Physics of Microstructures of Russian Academy of Sciences)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

375件中(241 - 250)

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