[B-2-2] A Flash Memory Technology for Operating Voltage Reduction and Self-Convergence of the Over Erased Cells

S. Sato、T. Tanigami、K. Hakozaki、N. Shinmura、K. Iguchi、K. Sakiyama (1.VLSI Development Laboratories, IC Group, SHARP Corporation)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-3] Comparison of Over Erase Susceptibility and Cycling Reliability between Channel Erase and Bitline Erase in Flash EEPROM

Jen-Tai Hsu、Stuart Shumway (1.Memory Product Division, National Semiconductor Corporation)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-4] High-Reliability Programming Method Suitable for Flash Memories of More Than 256 Mb

Naoki Miyamoto、Takayuki Kawahara、Syun-ichi Saeki、Yusuke Jyouno、Masataka Kato、Katsutaka Kimura (1.Hitachi Device Engineering, Co., Ltd.、2.Central Research Laboratory, Hitachi Ltd.、3.Semiconductor & Integrated Circuits Division, Hitachi Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-IV-1] Thin Film Challenges of the SIA National Technology Roadmap

D. B. Fraser (1.Intel)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-IV-2] Dissociative Adsorption Mechanism of Product Gas in W-CVD Revealed by Molecular Orbital Calculation and Its Determinant Role in Filling Features

Yoshiaki TAKEMURA、Jiro USHIO、Takuya MARUIZUMI、Ryotaro IRIE、Nobuyoshi KOBAYASHI (1.Central Research Laboratory, Hitachi, Ltd.、2.Semiconductor Development Center, Semiconductor & Integrated Circuits Division, Hitachi, Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-IV-3] Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications

Yoshitaka Nakamura、Nobuyoshi Kobayashi、Digh Hisamoto、Kazunori Umeda、Ryo Nagai (1.Semiconductor Development Center, Semiconductor & Integrated Circuits Div., Hitachi, Ltd.、2.Central Research Laboratory, Hitachi, Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-IV-4] W as a BIT Line Interconnection in COB Structured DRAM and Feasible Diffusion Barrier Layer

Jeong Soo Byun、Jun Ki Kim、Jin Won Park、Jae Jeong Kim (1.ULSI Laboratory of LG Semicon Co. Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-IV-5] Formation of Metal/Silicon Contacts for ULSI and Induced Defects by Silicidation

Yukio YASUDA、Shigeaki ZAIMA (1.Department of Crystalline Materials Science, School of Engineering, Nagoya University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-IV-6] Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)

H. Kotaki、M. Nakano、S. Hayashida、T. Matsuoka、S. Kakimoto、A. Nakano、K. Uda、Y. Sato (1.Central Research Laboratories, Sharp Corporation、2.Analysis Center, (IC) Group, Sharp Corporation)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-IV-7] Low Damage In-Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma

I. S. Park、M. Yoon、H. -D. Lee、C. S. Park、Y. J. Wee、G. H. Choi、K. Y. Oh、S. I. Lee、M. Y. Lee (1.Semiconductor R&D center, Samsung Electronics, Co. Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード