[PD-1-6] Local Atomic Bonding in Fluorinated Silicon Oxides: Static Dielectric Constant and Chemical Stability

Gerald LUCOVSKY、Hang-Yang YANG (1.North Carolina State University, Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-1-7] Distribution of Trapped Electron and Hole in Thin SiO2 Film

Kyu Nam Lim、Songcheol Hong、Kwyro Lee (1.Korea Advanced Institute of Science and Technology)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-1-8] Effect of Metals (Fe,Cu) on 8-nm-Thick Gate Oxide Reliability

Yoshimi SHIRAMIZU、Masaru TANAKA、Shinya YAMASAKI、Masaharu NAKAMORI、Nahomi AOTO、Hiroshi KITAJIMA (1.ULSI Device Development Laboratories, NEC Corporation)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-1-9] Two Correlated Mechanisms in Thin SiO2 Breakdown

Hideki SATAKE、Naoki YASUDA、Shin-ichi TAKAGI、Akira TORIUMI (1.ULSI Research Laboratories, TOSHIBA Corporation)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-1-10] A Percolation Approach to Dielectric Breakdown Statistics

Tetsufumi TANAMOTO、Akira TORIUMI (1.Research and Development Center, TOSHIBA Corporation)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-2-1] Metallic Impurity Growing Behavior on Surface Crystal Structure

Geun-Min CHOI、Katsuyuki SEKINE、Hiroshi MORITA、Tadahiro OHMI (1.Memory R & D Division, Hyundai Electronics Industries, Co., LTD、2.Department of Electronic Engineering, Faculty of Engineering, Tohoku University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-2-2] Selective Solid-Phase Crystallization of Amorphous Si by Oxygen Plasma Treatment

Yoshihiro OKADA、Katsuhide AOTO、Tanemasa ASANO (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-2-3] Boron-Induced √3×√3 Reconstruction on Si(111) Surface

M. Umekawa、S. Ohara、S. Tatsukawa、H. Kuriyama、S. Matsumoto (1.Faculty of Science and Technology, Keio University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-2-4] Transient Oxide Layer at a Thermally Grown SiO2/Si Interface, Interpreted Based on Local Vibration and X-Ray Reflectivity

Yoshihiro SUGITA、Naoki AWAJI、Satoru WATANABE (1.Fujitsu Laboratories ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-2-5] In-Situ Observation of Silicide Formation on Hydrogen-Terminated Si Surface by UHV-STM and LEED

S. Shingubara、S. Takata、S. Shinabe、E. Takahashi、T. Tanaka、H. Sakaue、T. Takahagi (1.Department of Electrical Engineering, Hiroshima University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

298件中(121 - 130)

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