[PD-2-6] Observation of Solution/Si Interface Using IR Spectrochemical Cell During Wet Chemical Oxidation

Yoshihiro SUGITA、Satoru WATANABE (1.Fujitsu Laboratories ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-2-7] High Temperature STM Observation of Layer-by-Layer Etching of Si(111) with O2 Flux

Tadahiro Komeda、Yasushiro Nishioka (1.Texas Instruments、2.Tsukuba Research and Development Center)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-2-8] Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on NH4F-Treated Si(111) Surface

H. Sakaue、E. Takahashi、T. Tanaka、A. Kojima、M. Osada、S. Shingubara、T. Takahagi (1.Department of Electrical Engineering, Faculty of Engineering, Hiroshima University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-1] Effect of Cap-Metals on Co Salicide Process

Hiroshi MINAKATA、Ken-ichi GOTO、Tosihiro SUGII (1.Fujitsu Laboratories Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-2] Correlation of W-Si-N Film Microstructure with Barrier Performance against Cu Diffusion

Yoshiaki SHIMOOKA、Tadashi IIJIMA、Shinichi NAKAMURA、Kyoichi SUGURO (1.Microelectronics Engineering Lab., Environmental Engineering Labs., TOSHIBA Corporation)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-3] A Comparative Study of CVD and PVD Tungsten Nitride Diffusion Barriers for Cu Metallization

S. C. Sun、M. H. Tsai、H. T. Chiu、S. H. Chuang、M. C. Chen、W. K. Yeh、T. D. Wu (1.National Nano Device Laboratory and Department of Electronics Engineering Institute of Applied Chemistry National Chiao Tung University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-4] Atomistic Observation of Titanium Adsorption and Initial Growth of Titanium Silicide on Si(111)

H. Kuriyama、S. Tatsukawa、M. Umekawa、S. Ohara、S. Matsumoto (1.Department of Electrical Engineering, Keio University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-3-5] Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors

Yuichi MATSUI、Keiko KUSHIDA、Hiroshi MIKI、Kazuyoshi TORII、Yoshihisa FUJISAKI (1.Central Research Laboratory, Hitachi, Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-4-1] Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region

M. Takase、K. Eriguchi、B. Mizuno (1.Semiconductor Research Center, Matsushita Electric Industrial, Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-4-2] Formation of Ultra-Shallow and Low-Leakage p+n Junctions by Low-Temperature Post-Implantation Annealing

Akira NAKADA、Kei KANEMOTO、Mauricio Massazumi OKA、Yukio TAMAI、Tadahiro OHMI (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University、2.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

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