[A-3-4] A Study of Via-Electromigration Failure in Multilevel Interconnection with High Temperature Sputtered Aluminum

Makiko Kageyama、Keiichi Hashimoto、Hiroshi Onoda (1.VLSI R&D Center, Oki Electric Industry Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-1] Ultra-Shallow Doping for Si Sub-0.1 μm Devices

S. Matsumoto (1.Department of Electrical Engineering, Keio University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-2] The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATR

Yukihiro KIYOTA、Seiji SUZUKI、Taroh INADA (1.Central Research Laboratory, Hitachi Ltd.、2.College of Engineering, Hosei University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-3] Channel Doping Engineering with Indium as an Alternative p-Type Dopant

Yeong-Taek Lee、Ki-Whan Song、Byung-Gook Park、Jong Duk Lee (1.Inter-University Semiconductor Research Center School of Electrical Engineering, Seoul Nat'l Univ.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-4] Influence of Ion Energy on Carrier Activation and Source/Drain Parasitic Resistance in Low-Energy Ion Implantation for 0.15-μm MOSFETs

Akio NISHIDA、Eiichi MURAKAMI、Shin'ichiro KIMURA (1.Central Research Laboratory, Hitachi Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-1] A Novel Technique for Ultrathin CoSi2 Layers: Oxide Mediated Epitaxy

Rymond T. Tung (1.Tokyo Institute of Technology, Research Center for Quantum Effect Electronics)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-2] Anomalous Junction Leakage Behavior of Ti-SALICIDE Contacts on Ultra-Shallow Junctions

Atsuko SAKATA、Masato KOYAMA、Haruko AKUTSU、Iwao KUNISHIMA、Mitsuo KOIKE、Mitsuhiro TOMITA (1.Microelectronics Engineering Laboratory, ULSI Research Laboratories, Environmental Engineering Laboratory, TOSHIBA Corporation)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-3] Advanced Ti Salicide Technology for High Performance Quarter-Micron Logic LSIs

Jun Suenaga、Hirofumi Sumi、Kazuhiro Tajima、Atsushi Horiuchi、Michihiro Kanno、Yutaka Okamoto (1.MOS Process dept., MOS LSI div., Semiconductor Company, Sony Corporation)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-4] Reconditioning-Free Polish for Inter-Layer-Dielectric Planarization

K. Nakamura、S. Kishii、Y. Arimoto (1.Fujitsu Laboratories Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-5] Reliability of Low-Parasitic-Capacitance Multilevel Interconnection Using Surface-Densified Low-ε Organic Spin-on Glass

Takeshi FURUSAWA、Yoshio HOMMA (1.Central Research Laboratory, Hitachi, Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

298件中(41 - 50)

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