[A-4-6] Initial Stage of Oxidation of Si(001)-2x1 Surface Studied by X-Ray Photoelectron Spectroscopy

Yoshinao Harada、Masaaki Niwa、Takaharu Nagatomi、Ryuichi Shimizu (1.ULSI Process Technology Development Center, Matsushita Electronics Corp.、2.Faculty of Engineering, Osaka University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-1] Influences of Impurities on Oxidation Processes of Si(100) Substrates

Hiroya Ikeda、Yasuyuki Nakagawa、Kenji Sato、Shigeaki Zaima、Yukio Yasuda (1.Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University、2.Center for Cooperative Research Advanced Science and Technology, Nagoya University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-2] Time Evolution of Mean and Dispersion in Si/SiO2 Interface States Generation Statistics

Yuichiro Mitani、Hideki Satake、Akira Toriumi (1.Advanced Semiconductor Devices Research Laboratories, Toshiba Corp.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-3] Non-Destructive Characterization of Electronic Properties of Pre- and Post-Processing Silicon Surfaces by UHV Contactless Capacitance-Voltage Method

Toshiyuki Yoshida、Tamotsu Hashizume、Hideki Hasegawa、Takamasa Sakai (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University、2.Dainippon Screen Manufacturing Co., Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-4] Structural Origin of Carrier Trap Levels at SiO2/Si Interface

N. Watanabe、A. Omura、H. Nohira、T. Hattori (1.Department of Electrical & Electronic Engineering, Musashi Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-5] Interface States for Silicon Oxide Layers Formed by Use of Catalytic Activity of a Platinuim Layer

Toshiro Yuasa、Kazuhiro Yamanaka、Kenji Yoneda、Yoshihiro Todokoro、Hikaru Kobayashi (1.Institute of Scientific and Industrial Research, Osaka University、2.ULSI Process Technology Development Center, Matsushita Electronic Corporation、3.Research Planning Department, Corporate Research Division, Matsushita Electric Industrial Co. Ltd.、4.PRESTO, Japan Science and Technology Corporation)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-6] Characterization of the Interface between Plasma-Oxidized SiO2 and Crystalline Silicon by Cathodoluminescence Spectroscopy (CLS)

Joerg SCHAFER、Alex P. YOUNG、 Leonard J. BRILLSON Hiro NIIMI、Gerald LUCOVSKY (1.Department of Electrical Engineering, Ohio State University、2.Department of Physics, North Carolina State University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-1] Reliability Issues of Floating Gate Flash Memory

Chi Chang (1.AMD, Inc. One AMD Place)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-2] Guide-Lines on Flash Memory Cell Selection

Kuniyoshi Yoshikawa (1.Micro & Custom LSI Division, Microprocessor Product engineering Dept. Toshiba Corporation)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-3] New Self-Convergent Programming Method for Multi-Level AND Flash Memory

Evans Ching-Song Yang、Wei-Jer Wong、Rick Shih-Jye Shen、Yen-Sen Wang、Charles Ching-Hsiang Hsu (1.Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード