[C-7-3] 0.25 μm FeRAM with CMVP (Capacitor-on-Metal/Via-Stacked-Plug) Memory Cell

Kazushi Amanuma, Sota Kobayashi, Toru Tatsumi, Yukihiko Maejima, Hiromitsu Hada, Junichi Yamada, Tohru Miwa, Hiroki Koike, Hideo Toyoshima, Takemitsu Kunio (1.Silicon Systems Research Laboratories, NEC Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-8-1] Distribution Function Integral Method for Modeling Ferroelectric Devices

Holger Goebel, Marc Ullmann, Guenther Schindler, Marcus Kastner (1.University of Bundeswehr, Institute of Electronics, 2.Infineon AG, Dept. MP E TF)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-8-2] Effect of Mechanical Stress on Polarization of Ferroelectric Thin Films

Y. Kumagai, H. Miura, T. Kumazawa (1.Mechanical Engineering Research Laboratory, Hitachi Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-8-3] MOCVD Preparation of Epitaxial SBT Films and Their Properties

Katsuyuki Ishikawa, Atsushi Saiki, Keisuke Saito, Hiroshi Fuankubo (1.Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 2.Research Cooperation Section, Tokyo Institute of Technology, 3.Application Laboratory, Analytical Department, Philips Japan, ltd)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-8-4] Effect of Thermal Data-Imprint on 2T/2C FeRAM Cell Operation

Naoya Inoue, Yoshihiro Hayashi (1.ULSI Res. Lab, Silicon Systems Res. Labs., NEC)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-9-1] Effects of Encapsulating Barrier Layer on Ferroelectric Properties of Ir/IrO2/PZT/Pt/IrO2 Capacitor

Yong Tak Lee, Hag-Ju Cho, Sang Jeong Oh, Suk Ho Joo, Joong Jae Lee, Kyu Mann Lee, Soon Oh Park, Young Wook Park, Sang In Lee (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-9-2] Excellent Ferroelectric Properties in PZT Capacitor Cell with Thin SRO Film in Both Top and Bottom Electrodes

T. Morimoto, O. Hidaka, K. Yamakawa, O. Arisumi, H. Kanaya, T. Iwamoto, Y. Kumura, I. Kunishima, S. Tanaka (1.Microelectronics Engineering Laboratory, Toshiba Corporation, Semiconductor company, 2.Corporate Manufacturing Engineering Center, Toshiba Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-9-3] Low Voltage Saturation of a PZT Film on (100) Ir / (100) YSZ/ (100)Si Substrate Structure Prepared by Reactive Sputtering

S. Horii, S. Yokoyama, T. Kuniya, S. Horita (1.Japan Advanced Institutes of Science and Technology, School of Material Science, Japan, 2.Delegated from Kokusai Electric Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-9-4] Low Voltage Operation of the Ferroelectric Pb(Zr, Ti)O3 Capacitors Derived by Sol-Gel Method

Yoshikazu Fujimori, Toshiyuki Takeda, Takashi Nakamura, Hidemi Takasu (1.Device Technology Div., Semiconductor Research and Development Headquarters, ROHM CO., LTD.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-10-1] Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric (SrBi2Ta2O9)- Gate FETs and CMOS Schmitt-Trigger Oscillators

Sung-Min Yoon, Eisuke Tokumitsu, Hiroshi Ishiwara (1.Frontier Collaborative Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology)

1999 International Conference on Solid State Devices and Materials |PDF Download