[C-6-4] High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector

Naoyuki Nakada, Masaharu Nakaji, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno (1.Department of Electrical and Computer Engineering, Nagoya Institute of Technology, 2.Research Center for Micro-Structure Devices, Nagoya Institute of Technology, 3.Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-6-5] High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode

Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Toshio Matsushita, Takashi Mukai (1.Department of Research and Development, Nichia Chemical Industries, Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-4-1] Carbon Nanotubes: Electronic Properties and Devices

Phaedon Avouris (1.IBM Research Division, T. J. Watson Center)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-4-2] Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation (V-PADOX)

Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, K. Murase (1.NTT Basic Research Laboratories)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-4-3] Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)

Seiji Horiguchi, Masao Nagase, Kenji Shiraishi, Hiroyuki Kageshima, Yasuo Takahashi, Katsumi Murase (1.NTT Basic Research Laboratories)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-4-4] Room Temperature Coulomb Oscillation of a Single Electron Switch with an Electrically Formed Quantum Dot and Its Modeling

Dae Hwan Kim, Jong Duk Lee, Byung-Gook Park (1.Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul Nat'l Univ.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-5-1] Characteristics of Silicon Single Electron Transistors Controlled by Charge Injection into Silicon Nano-Crystal Floating Dots

N. Takahashi, H. Ishikuro, T. Hiramoto (1.Institute of Industrial Science, University of Tokyo, 2.VLSI Design and Education Center, Univ. of Tokyo)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-5-2] Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by AFM Nano-Oxidation Process

Y. Gotoh, K. Matsumoto, V. Bubanja, F. Vazquez, T. Maeda, J. S. Harris (1.Electrotechnical Laboratory MITI, 2.Stanford University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-5-3] Hot Electron Transport in Si-MOSFETs

Toshitsugu Sakamoto, Hisao Kawaura, Takahiro Iizuka, Toshio Baba (1.Fundamental Research Labs., NEC, 2.ULSI Device Development Labs., NEC)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-6-1] Ultrahigh-Speed and Low Power Integrated Circuits Employing Resonant Tunneling Diodes

Koichi Maezawa (1.School of Engineering, Nagoya University)

1999 International Conference on Solid State Devices and Materials |PDF Download