Ru Capacitor for 1 Giga-Scale DRAMs and Beyond

Jin-Won Kim, Sang-Don Nam, Seung-Hwan Lee, Seok-Jun Won, Wan-Don Kim, Cha-Young Yoo, Young-Wook Park, Sang-In Lee, Moon-Yong Lee (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-4-4] Reliable High-k TiO2 Gate Insulator Formed by Ultrathin TiN Deposition and Low Temperature Oxidation

Kohji Matsuo, Kazuaki Nakajima, Seiichi Omoto, Shinich Nakamura, Atsushi Yagishita, Gaku Minamihaba, Hiroyuki Yano, Kyoichi Suguro (1.Microelectronics Engineering Laboratory, Toshiba Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-5-1] Addressing Environment, Health and Safety in Semiconductor Process Technology Development

Laurie Beu, Kathy McCormack, Laura Mendicino, Victor Vartanian (1.Motorola)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-5-2] Electromigration and Thermal Strains in Cu and Al Metallization Features Determined through x-ray Microdiffraction

I. C. Noyan, P.-C. Wang, S. K. Kaldor, J. Jordan-Sweet (1.International Business Machines Corp., Research Division T. J. Watson Laboratory, 2.International Business Machines Corp., Microelectronics Division)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-5-3] A Low Thermal-Budget High-Performanced 0.25-0.18um Merged Logic and DRAM

W. K. Yeh, Y. C. Lin, T. P. Chen, K. C. Huang, Haber Chen, M. T. Lin, L. J. Chou, Samuel Tsang, Kirk Hsu, W. J. Lin, L. T. Jung, S. C. Chien, S. W. Sun, F. T. Liou (1.United Microelectronics Corp., Specialty Technology Department, Technology & Process Development Division)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-5-4] Inter-Layer Dielectric Reliability on 1GDRAM with COB Structure

D. H. Kim, B. C. Kim, M. K. Bae, S. C. Lee, J. W. Nam, T. K. KIM, J. S. Kim, Y. J. Park, J. W. Park (1.Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-6-1] Highly Reliable Dual Gate Oxide Fabrication by Reducing Wet Etching Time and Re-Oxidation for Sub-Quarter Micron CMOS Devices

Ihl Hyun Cho, Key Min Lee, Hong Goo Choi, Sang Hyuk Park, Seok-Woo Lee, Nag Kyun Sung, Hae Wang Lee, Jae-Gyung Ahn, Yun Jun Huh, Dong Kyun Sohn, Dae Kwan Kang, Jin Won Park (1.R&D Division, LG Semicon. Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-6-2] Device Performances Improvement Based on TED Suppression in Deep Sub-Quarter Micron Regime

Hyun-Sik Kim, Jong-Hyon Ahn, Duk-Min Lee, Soo-Cheol Lee, Kwang-Pyuk Suh (1.CPU Tech. Team, Samsung Electronics Co, Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] Effect of in-situ Formed Interlayer at Ta-SiO2 interface on Performance and Reliability in Ta-Gate MOS Devices

Takeo Ushiki, Kunihiro Kawai, Ichiro Ohshima, Tadahiro Ohmi (1.New Industry Creation Hatchery Center and Dept. of E/E, Tohoku University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-6-4] Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation

Masaru Moriwaki, Takayuki Yamada, Yoshinao Harada, Shinji Fujii, Michinari Yamanaka (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.)

1999 International Conference on Solid State Devices and Materials |PDF Download